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Transistors / RF Power Bipolar Transistors / ASI10667
Datasheets
ASI10667 by: Advanced Semiconductor Inc

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN,

Part Details for ASI10667 by Advanced Semiconductor Inc

Overview of ASI10667 by Advanced Semiconductor Inc

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for ASI10667

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ASI10667 Part Data Attributes

Parametric Data
ASI10667 Advanced Semiconductor Inc
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ASI10667 Advanced Semiconductor Inc RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN,
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Package Description FLANGE MOUNT, R-CDFM-F6
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 9 A
Collector-Emitter Voltage-Max 18 V
Configuration SINGLE
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F6
Number of Elements 1
Number of Terminals 6
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Element Material SILICON

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