Datasheets
AS4LC4M16DG-6/XT by: Micross Components

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, TSOP-50

Part Details for AS4LC4M16DG-6/XT by Micross Components

Overview of AS4LC4M16DG-6/XT by Micross Components

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Part Details for AS4LC4M16DG-6/XT

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AS4LC4M16DG-6/XT Part Data Attributes

AS4LC4M16DG-6/XT Micross Components
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AS4LC4M16DG-6/XT Micross Components EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, TSOP-50
Part Life Cycle Code Obsolete
Ihs Manufacturer AUSTIN SEMICONDUCTOR INC
Part Package Code TSOP
Package Description TSOP2,
Pin Count 50
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE WITH EDO
Access Time-Max 60 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 Code R-PDSO-G50
JESD-609 Code e4
Length 20.95 mm
Memory Density 67108864 bit
Memory IC Type EDO DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 50
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Organization 4MX16
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade MILITARY
Terminal Finish PALLADIUM GOLD
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for AS4LC4M16DG-6/XT

This table gives cross-reference parts and alternative options found for AS4LC4M16DG-6/XT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4LC4M16DG-6/XT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HYB3166165BT-60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Infineon Technologies AG AS4LC4M16DG-6/XT vs HYB3166165BT-60
K4E661612B-TC60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor AS4LC4M16DG-6/XT vs K4E661612B-TC60
K4E661612E-TL60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor AS4LC4M16DG-6/XT vs K4E661612E-TL60
KM416V4004CS-6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor AS4LC4M16DG-6/XT vs KM416V4004CS-6
KM416V4004CS-L6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor AS4LC4M16DG-6/XT vs KM416V4004CS-L6
TMS465169-60DGE 4MX16 EDO DRAM, 60ns, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 Texas Instruments AS4LC4M16DG-6/XT vs TMS465169-60DGE
K4E641612E-TP60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor AS4LC4M16DG-6/XT vs K4E641612E-TP60
K4E661612C-TL60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor AS4LC4M16DG-6/XT vs K4E661612C-TL60
K4E661612E-TP60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor AS4LC4M16DG-6/XT vs K4E661612E-TP60
TMS464169-60DGE 4MX16 EDO DRAM, 60ns, PDSO50 Texas Instruments AS4LC4M16DG-6/XT vs TMS464169-60DGE
Part Number Description Manufacturer Compare
MT4LC4M16U6TG-60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 Micron Technology Inc AS4LC4M16DG-6/XT vs MT4LC4M16U6TG-60
HYB3164165AT-40 EDO DRAM, 4MX16, 40ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Infineon Technologies AG AS4LC4M16DG-6/XT vs HYB3164165AT-40
K4F661612B-TL60 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor AS4LC4M16DG-6/XT vs K4F661612B-TL60
K4F641612D-TP60 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor AS4LC4M16DG-6/XT vs K4F641612D-TP60
HYB3164165ATL-60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Infineon Technologies AG AS4LC4M16DG-6/XT vs HYB3164165ATL-60
KM416V4000AS-5 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor AS4LC4M16DG-6/XT vs KM416V4000AS-5
MT4LC4M16F5TG-5TR Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 Micron Technology Inc AS4LC4M16DG-6/XT vs MT4LC4M16F5TG-5TR
K4F661612B-TC60 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor AS4LC4M16DG-6/XT vs K4F661612B-TC60
HM5164160ATT-7 Fast Page DRAM, 4MX16, 70ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Hitachi Ltd AS4LC4M16DG-6/XT vs HM5164160ATT-7
K4E641611C-TC600 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor AS4LC4M16DG-6/XT vs K4E641611C-TC600

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