Part Details for AS4C4M32S-6BIN by Alliance Memory Inc
Overview of AS4C4M32S-6BIN by Alliance Memory Inc
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| LT1236BIN8-10#PBF | Analog Devices | Prec Ref | |
| LT1236BIN8-5#PBF | Analog Devices | Prec Ref | |
| LTC1296BIN#PBF | Analog Devices | 1x Chip 12-B Data Acquisition |
Price & Stock for AS4C4M32S-6BIN
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
85AK7029
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Newark | Sdr, 128Mb, 4M X 32, 3.3V, 90-Ball Bga, 166 Mhz, Industrial Temp |Alliance Memory AS4C4M32S-6BIN RoHS: Not Compliant Min Qty: 190 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$5.8000 / $6.1000 | Buy Now |
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DISTI #
1450-1156-ND
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DigiKey | IC DRAM 128MBIT PAR 90TFBGA Min Qty: 1 Lead time: 20 Weeks Container: Tray |
9645 In Stock |
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$3.8125 / $5.0000 | Buy Now |
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DISTI #
AS4C4M32S-6BIN
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Avnet Americas | DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 90-Pin TF-BGA - Trays (Alt: AS4C4M32S-6BIN) RoHS: Not Compliant Min Qty: 190 Package Multiple: 190 Lead time: 20 Weeks, 0 Days Container: Tray | 13127 Factory Stock |
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$3.8430 | Buy Now |
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DISTI #
913-AS4C4M32S-6BIN
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Mouser Electronics | DRAM SDRAM, 128Mb, 4M x 32, 3.3V, 90-ball BGA, 166 MHz, Industrial Temp - Tray RoHS: Compliant | 1022 |
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$3.8100 / $4.3400 | Buy Now |
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Future Electronics | AS4C2M32 Series 128-Mbit (4 M x 32) 3.3V 166MHz Industrial SDRAM - TFBGA-90 RoHS: Compliant pbFree: Yes Min Qty: 190 Package Multiple: 190 Lead time: 20 Weeks Container: Tray | 0Tray |
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$3.7400 | Buy Now |
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Karl Kruse GmbH & Co KG | SDR 128Mb 4M x 32 3.3V 90-ball BGA 166 MHz Industrial Temp | 11200 |
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RFQ | |
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DISTI #
AS4C4M32S-6BIN
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Avnet Silica | DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 90-Pin TF-BGA (Alt: AS4C4M32S-6BIN) RoHS: Compliant Min Qty: 190 Package Multiple: 190 Lead time: 21 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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New Advantage Corporation | 90BALL TFBGA/INDUSTRIAL (-40 ~ 85�C)/128Mbits RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 120 |
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$6.3900 | Buy Now |
Part Details for AS4C4M32S-6BIN
AS4C4M32S-6BIN CAD Models
AS4C4M32S-6BIN Part Data Attributes
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AS4C4M32S-6BIN
Alliance Memory Inc
Buy Now
Datasheet
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Compare Parts:
AS4C4M32S-6BIN
Alliance Memory Inc
Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-90
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ALLIANCE MEMORY INC | |
| Package Description | 8 X 13 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-90 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Alliance Memory | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PBGA-B90 | |
| Length | 13 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 32 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 90 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 4MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA90,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.003 A | |
| Supply Current-Max | 0.2 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 8 mm |
Alternate Parts for AS4C4M32S-6BIN
This table gives cross-reference parts and alternative options found for AS4C4M32S-6BIN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4C4M32S-6BIN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT48LC4M32B2F5-6AT:L | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, (8 X 13) MM, PLASTIC, VFBGA-90 | Micron Technology Inc | AS4C4M32S-6BIN vs MT48LC4M32B2F5-6AT:L |
| MT48LC4M32B2F5-6A:LAT | IC 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90, 8 X 13 MM, PLASTIC, VFBGA-90, Dynamic RAM | Micron Technology Inc | AS4C4M32S-6BIN vs MT48LC4M32B2F5-6A:LAT |
| MT48LC4M32B2B5-6AXIT:L | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 | Micron Technology Inc | AS4C4M32S-6BIN vs MT48LC4M32B2B5-6AXIT:L |
| MT48LC4M32B2F5-6AAT:L | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, PLASTIC, VFBGA-90 | Micron Technology Inc | AS4C4M32S-6BIN vs MT48LC4M32B2F5-6AAT:L |
| MT48LC4M32B2F5-6A:L | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, PLASTIC, VFBGA-90 | Micron Technology Inc | AS4C4M32S-6BIN vs MT48LC4M32B2F5-6A:L |
| AS4C4M32S-6BINTR | IC SDRAM 128MBIT 166MHZ 90BGA | Alliance Memory Inc | AS4C4M32S-6BIN vs AS4C4M32S-6BINTR |
| MT48LC4M32B2F5-6AIT:L | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, PLASTIC, VFBGA-90 | Micron Technology Inc | AS4C4M32S-6BIN vs MT48LC4M32B2F5-6AIT:L |
| MT48LC4M32B2B5-6AAIT:L | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 | Micron Technology Inc | AS4C4M32S-6BIN vs MT48LC4M32B2B5-6AAIT:L |
| MT48LC4M32B2B5-6 | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, (8 X 13) MM, LEAD FREE, PLASTIC, VFBGA-90 | Micron Technology Inc | AS4C4M32S-6BIN vs MT48LC4M32B2B5-6 |
| MT48LC4M32B2B5-6AT | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, (8 X 13) MM, LEAD FREE, PLASTIC, VFBGA-90 | Micron Technology Inc | AS4C4M32S-6BIN vs MT48LC4M32B2B5-6AT |