Datasheets
APTM50AM70FT1G by: Microsemi Corporation

Power Field-Effect Transistor, 50A I(D), 500V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-12

Part Details for APTM50AM70FT1G by Microsemi Corporation

Overview of APTM50AM70FT1G by Microsemi Corporation

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Part Details for APTM50AM70FT1G

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APTM50AM70FT1G Part Data Attributes

APTM50AM70FT1G Microsemi Corporation
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APTM50AM70FT1G Microsemi Corporation Power Field-Effect Transistor, 50A I(D), 500V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-12
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICROSEMI CORP
Package Description ROHS COMPLIANT PACKAGE-12
Pin Count 12
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Case Connection ISOLATED
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUFM-X12
Number of Elements 2
Number of Terminals 12
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 390 W
Pulsed Drain Current-Max (IDM) 270 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APTM50AM70FT1G

This table gives cross-reference parts and alternative options found for APTM50AM70FT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APTM50AM70FT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APTM60A11FT1G Power Field-Effect Transistor, 40A I(D), 600V, 0.11ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc APTM50AM70FT1G vs APTM60A11FT1G
APTM50H15FT1G Power Field-Effect Transistor, 25A I(D), 500V, 0.156ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-12 Microsemi Corporation APTM50AM70FT1G vs APTM50H15FT1G

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