Part Details for APT97N65B2C6 by Microsemi Corporation
Overview of APT97N65B2C6 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for APT97N65B2C6
APT97N65B2C6 CAD Models
APT97N65B2C6 Part Data Attributes
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APT97N65B2C6
Microsemi Corporation
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Datasheet
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APT97N65B2C6
Microsemi Corporation
Power Field-Effect Transistor, 97A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | TO-247 | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 1954 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 97 A | |
| Drain-source On Resistance-Max | 0.041 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 291 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for APT97N65B2C6
This table gives cross-reference parts and alternative options found for APT97N65B2C6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT97N65B2C6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT97N65LC6 | Power Field-Effect Transistor, 97A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Microsemi Corporation | APT97N65B2C6 vs APT97N65LC6 |
| IPW60R017C7 | Power Field-Effect Transistor, 109A I(D), 600V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Infineon Technologies AG | APT97N65B2C6 vs IPW60R017C7 |
| APT94N60L2C3E3 | Power Field-Effect Transistor, 94A I(D), 600V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN | Microsemi Corporation | APT97N65B2C6 vs APT94N60L2C3E3 |
| APT106N60B2C6 | Power Field-Effect Transistor, 106A I(D), 600V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | APT97N65B2C6 vs APT106N60B2C6 |
| APT94N65B2C3 | Power Field-Effect Transistor, 94A I(D), 650V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 | Microsemi Corporation | APT97N65B2C6 vs APT94N65B2C3 |