Part Details for APT84F50B2 by Microsemi Corporation
Overview of APT84F50B2 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Part Details for APT84F50B2
APT84F50B2 CAD Models
APT84F50B2 Part Data Attributes
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APT84F50B2
Microsemi Corporation
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Datasheet
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APT84F50B2
Microsemi Corporation
Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, T-MAX-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | ROHS COMPLIANT, T-MAX-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 1845 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 84 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 185 pF | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 1135 W | |
| Power Dissipation-Max (Abs) | 1135 W | |
| Pulsed Drain Current-Max (IDM) | 270 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Pure Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 155 ns | |
| Turn-on Time-Max (ton) | 60 ns |
Alternate Parts for APT84F50B2
This table gives cross-reference parts and alternative options found for APT84F50B2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT84F50B2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT84M50L | Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | Microchip Technology Inc | APT84F50B2 vs APT84M50L |
| APT84M50L | Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT, 3 PIN | Microsemi Corporation | APT84F50B2 vs APT84M50L |
| IXFX80N50P | Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | IXYS Corporation | APT84F50B2 vs IXFX80N50P |
| IXFK80N50Q3 | Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN | IXYS Corporation | APT84F50B2 vs IXFK80N50Q3 |
| IXFX80N50P | Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | Littelfuse Inc | APT84F50B2 vs IXFX80N50P |
| APT81H50L | Power Field-Effect Transistor, 81A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT PACKAGE-3 | Microsemi Corporation | APT84F50B2 vs APT81H50L |
| APT84M50B2 | Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, T-MAX, 3 PIN | Microsemi Corporation | APT84F50B2 vs APT84M50B2 |
| IXFK80N50P | Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Littelfuse Inc | APT84F50B2 vs IXFK80N50P |
| APT84F50L | Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | Microchip Technology Inc | APT84F50B2 vs APT84F50L |