Part Details for APT802R4BN by Advanced Power Technology
Overview of APT802R4BN by Advanced Power Technology
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for APT802R4BN
APT802R4BN CAD Models
APT802R4BN Part Data Attributes
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APT802R4BN
Advanced Power Technology
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Datasheet
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APT802R4BN
Advanced Power Technology
Power Field-Effect Transistor, 5.5A I(D), 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 5.5 A | |
Drain-source On Resistance-Max | 2.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 66 pF | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 180 W | |
Power Dissipation-Max (Abs) | 180 W | |
Pulsed Drain Current-Max (IDM) | 22 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 79 ns | |
Turn-on Time-Max (ton) | 42 ns |
Alternate Parts for APT802R4BN
This table gives cross-reference parts and alternative options found for APT802R4BN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT802R4BN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BUK438W-800B,127 | 6.6A, 800V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | NXP Semiconductors | APT802R4BN vs BUK438W-800B,127 |
APT1002RBNR-BUTT | Power Field-Effect Transistor, 7A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Advanced Power Technology | APT802R4BN vs APT1002RBNR-BUTT |
APT902R4BN | 6.5A, 900V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | Microsemi Corporation | APT802R4BN vs APT902R4BN |
BFC42 | 7A, 1000V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | TT Electronics Power and Hybrid / Semelab Limited | APT802R4BN vs BFC42 |
APT902R4BN | Power Field-Effect Transistor, 6.5A I(D), 900V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Advanced Power Technology | APT802R4BN vs APT902R4BN |
BFC46 | 5.5A, 800V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | TT Electronics Power and Hybrid / Semelab Limited | APT802R4BN vs BFC46 |
APT1002RBNR | 7A, 1000V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | Microsemi Corporation | APT802R4BN vs APT1002RBNR |
BUK438W-800B127 | TRANSISTOR 6.6 A, 800 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, FET General Purpose Power | NXP Semiconductors | APT802R4BN vs BUK438W-800B127 |
APT1004RBNR | 4.4A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | Microsemi Corporation | APT802R4BN vs APT1004RBNR |
BFC42 | Power Field-Effect Transistor, 7A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | TT Electronics Resistors | APT802R4BN vs BFC42 |