Datasheets
APT50M50L2LLG by:

Power Field-Effect Transistor, 89A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA

Part Details for APT50M50L2LLG by Microchip Technology Inc

Overview of APT50M50L2LLG by Microchip Technology Inc

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Price & Stock for APT50M50L2LLG

Part # Distributor Description Stock Price Buy
DISTI # 78AH6018
Newark Mosfet Mos7 500 V 50 Mohm To-264 Max 3 To-264 Max Tube Rohs Compliant: Yes |Microchip APT50M50L2LLG RoHS: Compliant Min Qty: 25 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $37.7300
  • 100 $32.5700
  • 250 $31.3700
  • 500 $30.6200
$30.6200 / $37.7300 Buy Now
DISTI # APT50M50L2LLG-ND
DigiKey MOSFET N-CH 500V 89A 264 MAX Min Qty: 25 Lead time: 26 Weeks Container: Tube Temporarily Out of Stock
  • 25 $37.7300
$37.7300 Buy Now
DISTI # APT50M50L2LLG
Avnet Americas Trans MOSFET N-CH 500V 89A 3-Pin(3+Tab) TO-264 MAX - Rail/Tube (Alt: APT50M50L2LLG) RoHS: Compliant Min Qty: 25 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 1 $37.7300
  • 100 $32.5700
  • 250 $31.3700
  • 500 $30.6200
$30.6200 / $37.7300 Buy Now
DISTI # 494-APT50M50L2LLG
Mouser Electronics MOSFETs MOSFET MOS7 500 V 50 mOhm TO-264 MAX RoHS: Compliant 0
  • 25 $37.7300
  • 100 $32.5700
$32.5700 / $37.7300 Order Now
DISTI # APT50M50L2LLG
Microchip Technology Inc MOSFET MOS 7 500 V 50 mOhm TO-264 MAX, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $37.7300
  • 100 $32.5700
  • 250 $31.3700
  • 500 $30.6200
  • 1,000 $29.8800
  • 5,000 $28.9000
$28.9000 / $37.7300 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 1 0
  • 25 $32.6700
$32.6700 Buy Now
Onlinecomponents.com Trans MOSFET N-CH 500V 89A 3-Pin(3+Tab) TO-264 MAX Tube RoHS: Compliant 15 Factory Stock
  • 7 $43.7500
  • 13 $35.3400
  • 19 $33.8500
  • 25 $33.1700
$33.1700 / $43.7500 Buy Now
DISTI # APT50M50L2LLG
TME Transistor: N-MOSFET, unipolar, 500V, 89A, Idm: 356A, 893W, TO264MAX Min Qty: 1 0
  • 1 $54.5400
  • 3 $49.0900
  • 10 $43.3700
$43.3700 / $54.5400 RFQ
NAC FG, MOSFET, 500V, TO-264 MAX, RoHS RoHS: Compliant Min Qty: 10 Package Multiple: 1 Container: Tube 0
  • 1 $35.0000
  • 100 $32.2400
  • 500 $30.6300
  • 800 $29.8800
$29.8800 / $35.0000 Buy Now
DISTI # APT50M50L2LLG
Avnet Silica (Alt: APT50M50L2LLG) RoHS: Compliant Min Qty: 25 Package Multiple: 1 Lead time: 28 Weeks, 0 Days Silica - 0
Buy Now
DISTI # APT50M50L2LLG
EBV Elektronik (Alt: APT50M50L2LLG) RoHS: Compliant Min Qty: 25 Package Multiple: 1 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics Trans MOSFET N-CH 500V 89A 3-Pin(3+Tab) TO-264 MAX Tube RoHS: Compliant 15 Factory Stock
  • 7 $43.7500
  • 13 $35.3400
  • 19 $33.8500
  • 25 $33.1700
$33.1700 / $43.7500 Buy Now

Part Details for APT50M50L2LLG

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APT50M50L2LLG Part Data Attributes

APT50M50L2LLG Microchip Technology Inc
Buy Now Datasheet
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APT50M50L2LLG Microchip Technology Inc Power Field-Effect Transistor, 89A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description TO-264MAX, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Avalanche Energy Rating (Eas) 3200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 89 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-264AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 356 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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