Part Details for APT200GT60JRDQ4 by Microsemi Corporation
Overview of APT200GT60JRDQ4 by Microsemi Corporation
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Applications
Industrial Automation
Energy and Power Systems
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Part Details for APT200GT60JRDQ4
APT200GT60JRDQ4 CAD Models
APT200GT60JRDQ4 Part Data Attributes
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APT200GT60JRDQ4
Microsemi Corporation
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Datasheet
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APT200GT60JRDQ4
Microsemi Corporation
Insulated Gate Bipolar Transistor, 195A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | ISOTOP | |
| Package Description | FLANGE MOUNT, R-XUFM-X4 | |
| Pin Count | 4 | |
| Manufacturer Package Code | ISOTOP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 195 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 30 V | |
| JESD-30 Code | R-XUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 595 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1086 ns | |
| Turn-on Time-Nom (ton) | 219 ns | |
| VCEsat-Max | 2.5 V |