Datasheets
APT150GN60J by:

Insulated Gate Bipolar Transistor, 220A I(C), 600V V(BR)CES, N-Channel

Part Details for APT150GN60J by Microchip Technology Inc

Overview of APT150GN60J by Microchip Technology Inc

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Applications Consumer Electronics Education and Research Industrial Automation Audio and Video Systems Electronic Manufacturing Entertainment and Gaming

Price & Stock for APT150GN60J

Part # Distributor Description Stock Price Buy
DISTI # 78AH5658
Newark Igbt Fieldstop Low Frequency Single 600 V 150 A Sot-227 4 Sot-227 Tube Rohs Compliant: Yes |Microchip APT150GN60J RoHS: Compliant Min Qty: 20 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $32.4300
  • 100 $28.0200
  • 250 $26.9600
  • 500 $26.3200
$26.3200 / $32.4300 Buy Now
DISTI # APT150GN60J-ND
DigiKey IGBT MOD 600V 220A 536W ISOTOP Min Qty: 20 Lead time: 28 Weeks Container: Tube Temporarily Out of Stock
  • 20 $32.4300
$32.4300 Buy Now
DISTI # APT150GN60J
Avnet Americas IGBT Module N-Channel 600V 220A 30V SOT-227 Screw Mount - Rail/Tube (Alt: APT150GN60J) RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Lead time: 28 Weeks, 0 Days Container: Tube 0
  • 1 $32.4300
  • 100 $28.0200
  • 250 $26.9600
  • 500 $26.3200
$26.3200 / $32.4300 Buy Now
DISTI # 494-APT150GN60J
Mouser Electronics IGBTs IGBT Fieldstop Low Frequency Single 600 V 150 A SOT-227 RoHS: Compliant 0
  • 1 $32.4300
$32.4300 Order Now
DISTI # APT150GN60J
Microchip Technology Inc IGBT Fieldstop Low Frequency Single 600 V 150 A SOT-227, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $32.4300
  • 100 $28.0200
  • 250 $26.9600
  • 500 $26.3200
  • 1,000 $25.6900
  • 5,000 $24.8500
$24.8500 / $32.4300 Buy Now
Future Electronics APT150GN60J Series 600 V 220 A Trench and Field Stop IGBT - SOT-227 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 28 Weeks Container: Tube 0
Tube
  • 1 $28.8500
  • 4 $28.4800
  • 15 $28.1400
  • 40 $27.8900
  • 100 $27.4800
$27.4800 / $28.8500 Buy Now
Onlinecomponents.com Trans IGBT Module N-CH 600V RoHS: Compliant 0
  • 1 $30.9600
  • 5 $28.4500
  • 10 $28.0200
  • 25 $26.9900
  • 50 $25.9900
  • 100 $25.6000
  • 250 $25.2100
$25.2100 / $30.9600 Buy Now
DISTI # APT150GN60J
TME Module: IGBT, single transistor, Urmax: 600V, Ic: 123A, SOT227B Min Qty: 1 0
  • 1 $46.8800
  • 3 $42.1900
  • 10 $37.2800
$37.2800 / $46.8800 RFQ
NAC FG, IGBT, 600V, 150A, SOT-227 RoHS: Compliant Min Qty: 11 Package Multiple: 1 Container: Tube 0
  • 1 $30.0700
  • 100 $27.7000
  • 500 $26.3100
  • 800 $25.6700
$25.6700 / $30.0700 Buy Now
DISTI # APT150GN60J
Richardson RFPD POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 20 0
  • 20 $28.9100
  • 50 $28.1600
  • 100 $27.8000
$27.8000 / $28.9100 Buy Now
DISTI # APT150GN60J
Avnet Silica (Alt: APT150GN60J) RoHS: Compliant Min Qty: 20 Package Multiple: 1 Lead time: 30 Weeks, 0 Days Silica - 0
Buy Now
Master Electronics Trans IGBT Module N-CH 600V RoHS: Compliant 0
  • 1 $30.9600
  • 5 $28.4500
  • 10 $28.0200
  • 25 $26.9900
  • 50 $25.9900
  • 100 $25.6000
  • 250 $25.2100
$25.2100 / $30.9600 Buy Now

Part Details for APT150GN60J

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APT150GN60J Part Data Attributes

APT150GN60J Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT150GN60J Microchip Technology Inc Insulated Gate Bipolar Transistor, 220A I(C), 600V V(BR)CES, N-Channel
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 28 Weeks
Additional Feature HIGH RELIABILITY
Case Connection ISOLATED
Collector Current-Max (IC) 220 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Gate-Emitter Voltage-Max 30 V
JESD-30 Code R-PUFM-X4
JESD-609 Code e1
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 536 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 575 ns
Turn-on Time-Nom (ton) 154 ns

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