Datasheets
APT130GL60JN by:

130A, 600V, N-CHANNEL IGBT, ISOTOP-4

Part Details for APT130GL60JN by Microsemi Corporation

Overview of APT130GL60JN by Microsemi Corporation

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Applications Energy and Power Systems Renewable Energy

Part Details for APT130GL60JN

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APT130GL60JN Part Data Attributes

APT130GL60JN Microsemi Corporation
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APT130GL60JN Microsemi Corporation 130A, 600V, N-CHANNEL IGBT, ISOTOP-4
Part Life Cycle Code Obsolete
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Part Package Code ISOTOP
Package Description FLANGE MOUNT, R-PUFM-X4
Pin Count 4
Manufacturer Package Code ISOTOP
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS
Case Connection ISOLATED
Collector Current-Max (IC) 130 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 415 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
VCEsat-Max 2.5 V

Alternate Parts for APT130GL60JN

This table gives cross-reference parts and alternative options found for APT130GL60JN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT130GL60JN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXSN62N60U1 Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, SOT-227B, 4 PIN IXYS Corporation APT130GL60JN vs IXSN62N60U1
APT60GT60BRG Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT PACKAGE-3 Microsemi Corporation APT130GL60JN vs APT60GT60BRG
APT60GT60JRD Insulated Gate Bipolar Transistor, 93A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4 Advanced Power Technology APT130GL60JN vs APT60GT60JRD
APT50GF120B2RG Insulated Gate Bipolar Transistor, 156A I(C), 1200V V(BR)CES, N-Channel Microchip Technology Inc APT130GL60JN vs APT50GF120B2RG
APT50GF120B2RG Insulated Gate Bipolar Transistor, 156A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, T-MAX, 3 PIN Microsemi Corporation APT130GL60JN vs APT50GF120B2RG
HGT1N30N60A4D Insulated Gate Bipolar Transistor, 96A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4 Fairchild Semiconductor Corporation APT130GL60JN vs HGT1N30N60A4D
APT60GT60BRG Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247 Microchip Technology Inc APT130GL60JN vs APT60GT60BRG
IXSX80N60B Insulated Gate Bipolar Transistor, 160A I(C), 600V V(BR)CES, N-Channel, PLUS247, 3 PIN IXYS Corporation APT130GL60JN vs IXSX80N60B

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