Datasheets
APT1004RBNR by:

Power Field-Effect Transistor, 4.4A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

Part Details for APT1004RBNR by Advanced Power Technology

Overview of APT1004RBNR by Advanced Power Technology

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Automotive

Part Details for APT1004RBNR

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APT1004RBNR Part Data Attributes

APT1004RBNR Advanced Power Technology
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APT1004RBNR Advanced Power Technology Power Field-Effect Transistor, 4.4A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 490 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 4.4 A
Drain-source On Resistance-Max 4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 180 W
Power Dissipation-Max (Abs) 180 W
Pulsed Drain Current-Max (IDM) 17.6 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for APT1004RBNR

This table gives cross-reference parts and alternative options found for APT1004RBNR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT1004RBNR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT1004RBNR 4.4A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD Microsemi Corporation APT1004RBNR vs APT1004RBNR
Part Number Description Manufacturer Compare
BUK438W-800B,127 6.6A, 800V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 NXP Semiconductors APT1004RBNR vs BUK438W-800B,127
APT1002RBNR-BUTT Power Field-Effect Transistor, 7A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Advanced Power Technology APT1004RBNR vs APT1002RBNR-BUTT
APT902R4BN 6.5A, 900V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD Microsemi Corporation APT1004RBNR vs APT902R4BN
BFC42 7A, 1000V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 TT Electronics Power and Hybrid / Semelab Limited APT1004RBNR vs BFC42
APT902R4BN Power Field-Effect Transistor, 6.5A I(D), 900V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD Advanced Power Technology APT1004RBNR vs APT902R4BN
BFC46 5.5A, 800V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 TT Electronics Power and Hybrid / Semelab Limited APT1004RBNR vs BFC46
APT1002RBNR 7A, 1000V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD Microsemi Corporation APT1004RBNR vs APT1002RBNR
BUK438W-800B127 TRANSISTOR 6.6 A, 800 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, FET General Purpose Power NXP Semiconductors APT1004RBNR vs BUK438W-800B127
APT1004RBNR 4.4A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD Microsemi Corporation APT1004RBNR vs APT1004RBNR
BFC42 Power Field-Effect Transistor, 7A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 TT Electronics Resistors APT1004RBNR vs BFC42

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