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Transistors Power Field-Effect Transistors APT1003RBLLG

APT1003RBLLG
Description: Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Overview of APT1003RBLLG by Microchip Technology Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for APT1003RBLLG by Microchip Technology Inc

Part # Manufacturer Description Stock Price Buy
DISTI # 78AH5556
Newark Mosfet Mos7 1000 V 3 Ohm To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT1003RBLLG RoHS: Compliant Min Qty: 60 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $8.8800
  • 100 $7.6900
  • 250 $7.4100
  • 500 $7.2200
$7.2200 / $8.8800 Buy Now
DISTI # APT1003RBLLG-ND
DigiKey MOSFET N-CH 1000V 4A TO247 Min Qty: 60 Lead time: 26 Weeks Container: Tube Temporarily Out of Stock
  • 60 $8.8800
$8.8800 Buy Now
DISTI # APT1003RBLLG
Avnet Americas Power MOS 7 MOSFET N-Channel 1000V 4A 3-Pin TO-247 - Rail/Tube (Alt: APT1003RBLLG) RoHS: Not Compliant Min Qty: 60 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 1 $8.8800
  • 100 $7.6900
  • 250 $7.4100
  • 500 $7.2200
$7.2200 / $8.8800 Buy Now
DISTI # 494-APT1003RBLLG
Mouser Electronics MOSFETs MOSFET MOS7 1000 V 3 Ohm TO-247 RoHS: Compliant 0
  • 1 $8.8800
  • 100 $7.6900
$7.6900 / $8.8800 Order Now
DISTI # APT1003RBLLG
Microchip Technology Inc MOSFET MOS 7 1000 V 3 Ohm TO-247, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $8.8800
  • 100 $7.6900
  • 250 $7.4100
  • 500 $7.2200
  • 1,000 $7.0600
  • 5,000 $6.8300
$6.8300 / $8.8800 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 60 Package Multiple: 1 0
  • 60 $7.7100
$7.7100 Buy Now
Onlinecomponents.com Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant 30 In Stock
66 Factory Stock
  • 5 $14.8000
  • 25 $10.4500
  • 50 $9.2300
  • 100 $9.0300
  • 250 $8.0300
  • 500 $7.9500
  • 1,000 $7.8700
$7.8700 / $14.8000 Buy Now
DISTI # APT1003RBLLG
TME Transistor: N-MOSFET, unipolar, 1kV, 4A, Idm: 16A, 139W, TO247-3 Min Qty: 1 0
  • 1 $12.8200
  • 3 $11.5900
  • 10 $10.2400
$10.2400 / $12.8200 RFQ
NAC FG, MOSFET, 1000V, TO-247, RoHS RoHS: Compliant Min Qty: 43 Package Multiple: 1 Container: Tube 0
  • 1 $8.5000
  • 100 $7.7100
  • 500 $7.2200
  • 1,000 $7.0500
$7.0500 / $8.5000 Buy Now
DISTI # APT1003RBLLG
EBV Elektronik Power MOS 7 MOSFET N-Channel 1000V 4A 3-Pin TO-247 (Alt: APT1003RBLLG) RoHS: Compliant Min Qty: 60 Package Multiple: 1 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant 30 In Stock
66 Factory Stock
  • 5 $14.8000
  • 25 $10.4500
  • 50 $9.2300
  • 100 $9.0300
  • 250 $8.0300
  • 500 $7.9500
  • 1,000 $7.8700
$7.8700 / $14.8000 Buy Now

CAD Models for APT1003RBLLG by Microchip Technology Inc
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Part Data Attributes for APT1003RBLLG by Microchip Technology Inc
Parametric Data

APT1003RBLLG
Microchip Technology Inc
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
26 Weeks
Avalanche Energy Rating (Eas)
425 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
1000 V
Drain Current-Max (ID)
4 A
Drain-source On Resistance-Max
3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
16 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN SILVER COPPER
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. APT1003RBLLG
    Microchip Technology Inc
    Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
    VS

Alternate Parts for APT1003RBLLG

This table gives cross-reference parts and alternative options found for APT1003RBLLG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT1003RBLLG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
APT1003RBLLG Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Microsemi Corporation APT1003RBLLG vs APT1003RBLLG
APT1003RBFLLG Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247, 3 PIN Microsemi Corporation APT1003RBLLG vs APT1003RBFLLG
Part Number Description Manufacturer Compare
IXFT4N100Q Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Littelfuse Inc APT1003RBLLG vs IXFT4N100Q
IXFP4N100P Power Field-Effect Transistor, 4A I(D), 1000V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Littelfuse Inc APT1003RBLLG vs IXFP4N100P
IXFT4N100Q Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN IXYS Corporation APT1003RBLLG vs IXFT4N100Q
IXFA4N100P Power Field-Effect Transistor, 4A I(D), 1000V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Littelfuse Inc APT1003RBLLG vs IXFA4N100P
IXFA4N100Q Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Littelfuse Inc APT1003RBLLG vs IXFA4N100Q
APT1003RSFLLG/TR Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc APT1003RBLLG vs APT1003RSFLLG/TR
IXFA4N100QSN Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3/2 IXYS Corporation APT1003RBLLG vs IXFA4N100QSN
APT1003RSFLLG Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc APT1003RBLLG vs APT1003RSFLLG
IXFA4N100P-TRL Power Field-Effect Transistor, Littelfuse Inc APT1003RBLLG vs IXFA4N100P-TRL
APT1003RKLLG Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Microchip Technology Inc APT1003RBLLG vs APT1003RKLLG

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