Part Details for APT1002RBNR-BUTT by Microsemi Corporation
Overview of APT1002RBNR-BUTT by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Automotive
Part Details for APT1002RBNR-BUTT
APT1002RBNR-BUTT CAD Models
APT1002RBNR-BUTT Part Data Attributes
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APT1002RBNR-BUTT
Microsemi Corporation
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Datasheet
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APT1002RBNR-BUTT
Microsemi Corporation
7A, 1000V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 800 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1000 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 240 W | |
Pulsed Drain Current-Max (IDM) | 28 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for APT1002RBNR-BUTT
This table gives cross-reference parts and alternative options found for APT1002RBNR-BUTT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT1002RBNR-BUTT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BUK438W-800B,127 | 6.6A, 800V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | NXP Semiconductors | APT1002RBNR-BUTT vs BUK438W-800B,127 |
APT1002RBNR-BUTT | Power Field-Effect Transistor, 7A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Advanced Power Technology | APT1002RBNR-BUTT vs APT1002RBNR-BUTT |
APT902R4BN | 6.5A, 900V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | Microsemi Corporation | APT1002RBNR-BUTT vs APT902R4BN |
BFC42 | 7A, 1000V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | TT Electronics Power and Hybrid / Semelab Limited | APT1002RBNR-BUTT vs BFC42 |
APT902R4BN | Power Field-Effect Transistor, 6.5A I(D), 900V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Advanced Power Technology | APT1002RBNR-BUTT vs APT902R4BN |
BFC46 | 5.5A, 800V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | TT Electronics Power and Hybrid / Semelab Limited | APT1002RBNR-BUTT vs BFC46 |
APT1002RBNR | 7A, 1000V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | Microsemi Corporation | APT1002RBNR-BUTT vs APT1002RBNR |
BUK438W-800B127 | TRANSISTOR 6.6 A, 800 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, FET General Purpose Power | NXP Semiconductors | APT1002RBNR-BUTT vs BUK438W-800B127 |
APT1004RBNR | 4.4A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | Microsemi Corporation | APT1002RBNR-BUTT vs APT1004RBNR |
BFC42 | Power Field-Effect Transistor, 7A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | TT Electronics Resistors | APT1002RBNR-BUTT vs BFC42 |