Part Details for APT1002R4BNR by Advanced Power Technology
Overview of APT1002R4BNR by Advanced Power Technology
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for APT1002R4BNR
APT1002R4BNR CAD Models
APT1002R4BNR Part Data Attributes
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APT1002R4BNR
Advanced Power Technology
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Datasheet
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APT1002R4BNR
Advanced Power Technology
Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 800 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1000 V | |
Drain Current-Max (ID) | 6.5 A | |
Drain-source On Resistance-Max | 2.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 240 W | |
Power Dissipation-Max (Abs) | 240 W | |
Pulsed Drain Current-Max (IDM) | 26 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for APT1002R4BNR
This table gives cross-reference parts and alternative options found for APT1002R4BNR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT1002R4BNR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BUK438W-800B,127 | 6.6A, 800V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | NXP Semiconductors | APT1002R4BNR vs BUK438W-800B,127 |
APT1002RBNR-BUTT | Power Field-Effect Transistor, 7A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Advanced Power Technology | APT1002R4BNR vs APT1002RBNR-BUTT |
APT902R4BN | 6.5A, 900V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | Microsemi Corporation | APT1002R4BNR vs APT902R4BN |
BFC42 | 7A, 1000V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | TT Electronics Power and Hybrid / Semelab Limited | APT1002R4BNR vs BFC42 |
APT902R4BN | Power Field-Effect Transistor, 6.5A I(D), 900V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Advanced Power Technology | APT1002R4BNR vs APT902R4BN |
BFC46 | 5.5A, 800V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | TT Electronics Power and Hybrid / Semelab Limited | APT1002R4BNR vs BFC46 |
APT1002RBNR | 7A, 1000V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | Microsemi Corporation | APT1002R4BNR vs APT1002RBNR |
BUK438W-800B127 | TRANSISTOR 6.6 A, 800 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, FET General Purpose Power | NXP Semiconductors | APT1002R4BNR vs BUK438W-800B127 |
APT1004RBNR | 4.4A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | Microsemi Corporation | APT1002R4BNR vs APT1004RBNR |
BFC42 | Power Field-Effect Transistor, 7A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | TT Electronics Resistors | APT1002R4BNR vs BFC42 |