Part Details for APT1001RBNR-BUTT by Microsemi Corporation
Overview of APT1001RBNR-BUTT by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
DC1090A | Analog Devices | LTC2954 Demo Board - Push Butt | |
DC1033B | Analog Devices | LTC2952 Demo Board - Push-Butt | |
DC1099A | Analog Devices | LTC2953 Demo Board - Push-Butt |
Part Details for APT1001RBNR-BUTT
APT1001RBNR-BUTT CAD Models
APT1001RBNR-BUTT Part Data Attributes
|
APT1001RBNR-BUTT
Microsemi Corporation
Buy Now
Datasheet
|
Compare Parts:
APT1001RBNR-BUTT
Microsemi Corporation
11A, 1000V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 1210 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1000 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 190 pF | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 310 W | |
Pulsed Drain Current-Max (IDM) | 44 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 245 ns | |
Turn-on Time-Max (ton) | 81 ns |
Alternate Parts for APT1001RBNR-BUTT
This table gives cross-reference parts and alternative options found for APT1001RBNR-BUTT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT1001RBNR-BUTT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
APT1001RBNR-GULLWING | Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN | Advanced Power Technology | APT1001RBNR-BUTT vs APT1001RBNR-GULLWING |
APT1001RBN-BUTT | 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Microsemi Corporation | APT1001RBNR-BUTT vs APT1001RBN-BUTT |
APT1001RBN-GULLWING | 11A, 1000V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | Microsemi Corporation | APT1001RBNR-BUTT vs APT1001RBN-GULLWING |