Datasheets
APT1001RBNR-BUTT by:

11A, 1000V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

Part Details for APT1001RBNR-BUTT by Microsemi Corporation

Overview of APT1001RBNR-BUTT by Microsemi Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Available Datasheets

Part # Manufacturer Description Datasheet
DC1090A Analog Devices LTC2954 Demo Board - Push Butt
DC1033B Analog Devices LTC2952 Demo Board - Push-Butt
DC1099A Analog Devices LTC2953 Demo Board - Push-Butt

Part Details for APT1001RBNR-BUTT

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APT1001RBNR-BUTT Part Data Attributes

APT1001RBNR-BUTT Microsemi Corporation
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APT1001RBNR-BUTT Microsemi Corporation 11A, 1000V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Part Life Cycle Code Obsolete
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 1210 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 190 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 310 W
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON
Turn-off Time-Max (toff) 245 ns
Turn-on Time-Max (ton) 81 ns

Alternate Parts for APT1001RBNR-BUTT

This table gives cross-reference parts and alternative options found for APT1001RBNR-BUTT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT1001RBNR-BUTT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT1001RBNR-GULLWING Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN Advanced Power Technology APT1001RBNR-BUTT vs APT1001RBNR-GULLWING
APT1001RBN-BUTT 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Microsemi Corporation APT1001RBNR-BUTT vs APT1001RBN-BUTT
APT1001RBN-GULLWING 11A, 1000V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN Microsemi Corporation APT1001RBNR-BUTT vs APT1001RBN-GULLWING

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