Part Details for APT1001R3BN by Advanced Power Technology
Overview of APT1001R3BN by Advanced Power Technology
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for APT1001R3BN
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | 2040 |
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RFQ |
Part Details for APT1001R3BN
APT1001R3BN CAD Models
APT1001R3BN Part Data Attributes:
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APT1001R3BN
Advanced Power Technology
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Datasheet
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Compare Parts:
APT1001R3BN
Advanced Power Technology
Power Field-Effect Transistor, 10A I(D), 1000V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 1.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 160 pF | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 310 W | |
| Power Dissipation-Max (Abs) | 310 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 143 ns | |
| Turn-on Time-Max (ton) | 62 ns |
Alternate Parts for APT1001R3BN
This table gives cross-reference parts and alternative options found for APT1001R3BN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT1001R3BN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUK474-200A | TRANSISTOR 5.3 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, PLASTIC, FULL PACK-3, FET General Purpose Power | NXP Semiconductors | APT1001R3BN vs BUK474-200A |
| PHP2N60 | TRANSISTOR 2.8 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | APT1001R3BN vs PHP2N60 |
| BUK637-500B | TRANSISTOR 10 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | APT1001R3BN vs BUK637-500B |
| APT40M70LVR | Power Field-Effect Transistor, 57A I(D), 400V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Advanced Power Technology | APT1001R3BN vs APT40M70LVR |
| PHX2N60 | TRANSISTOR 2.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | APT1001R3BN vs PHX2N60 |
| PHP18NQ20T | TRANSISTOR 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | APT1001R3BN vs PHP18NQ20T |
| APT6033BNR | Power Field-Effect Transistor, 22A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Advanced Power Technology | APT1001R3BN vs APT6033BNR |
| PHP45N03LT | TRANSISTOR 45 A, 25 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | APT1001R3BN vs PHP45N03LT |
| PHP191NQ06LT | Power Field-Effect Transistor | Nexperia | APT1001R3BN vs PHP191NQ06LT |
| BUK553-100B | TRANSISTOR 12 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | APT1001R3BN vs BUK553-100B |