Part Details for AP3987P by Advanced Power Electronics Corp
Overview of AP3987P by Advanced Power Electronics Corp
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for AP3987P
AP3987P CAD Models
AP3987P Part Data Attributes
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AP3987P
Advanced Power Electronics Corp
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Datasheet
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AP3987P
Advanced Power Electronics Corp
TRANSISTOR 7 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power
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Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | ADVANCED POWER ELECTRONICS CORP | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 27 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 28 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for AP3987P
This table gives cross-reference parts and alternative options found for AP3987P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AP3987P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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7N60G-T2Q-T-R | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, HALOGEN FREE, TO-262, 3 PIN | Unisonic Technologies Co Ltd | AP3987P vs 7N60G-T2Q-T-R |
7N65ZG-TA3-T | Power Field-Effect Transistor, 7.4A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | AP3987P vs 7N65ZG-TA3-T |
STP9NK60ZFD | 7A, 600V, 0.95ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | AP3987P vs STP9NK60ZFD |
7N65ZG-TQ2-R | Power Field-Effect Transistor, 7.4A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | AP3987P vs 7N65ZG-TQ2-R |
7N60G-TQ2-T | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | AP3987P vs 7N60G-TQ2-T |
7N60G-T2Q-T | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, HALOGEN FREE, TO-262, 3 PIN | Unisonic Technologies Co Ltd | AP3987P vs 7N60G-T2Q-T |
7N60ZG-TQ2-T | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | AP3987P vs 7N60ZG-TQ2-T |
7N60ZL-TA3-T | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | AP3987P vs 7N60ZL-TA3-T |
7N60L-T2Q-T | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN | Unisonic Technologies Co Ltd | AP3987P vs 7N60L-T2Q-T |
7N60G-TA3-T-R | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | AP3987P vs 7N60G-TA3-T-R |