Datasheets
AMM9001-01 by: Advanced Semiconductor Inc

Mixer Diode, Medium Barrier, X Band, 450ohm Z(V) Max, 6dB Noise Figure, Silicon,

Part Details for AMM9001-01 by Advanced Semiconductor Inc

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Part Details for AMM9001-01

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AMM9001-01 Part Data Attributes:

AMM9001-01 Advanced Semiconductor Inc
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AMM9001-01 Advanced Semiconductor Inc Mixer Diode, Medium Barrier, X Band, 450ohm Z(V) Max, 6dB Noise Figure, Silicon,
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Package Description O-LALF-W2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.60
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type MIXER DIODE
Frequency Band X BAND
Impedance-Max 450 Ω
Impedance-Min 200 Ω
JESD-30 Code O-LALF-W2
Noise Figure-Max 6 dB
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Pulsed Input Power-Max 0.1 W
Qualification Status Not Qualified
Surface Mount NO
Technology SCHOTTKY
Terminal Form WIRE
Terminal Position AXIAL
Type of Schottky Barrier MEDIUM BARRIER

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