Datasheets
AGR21180EF by:

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Part Details for AGR21180EF by TriQuint Semiconductor

Overview of AGR21180EF by TriQuint Semiconductor

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Part Details for AGR21180EF

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AGR21180EF Part Data Attributes

AGR21180EF TriQuint Semiconductor
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AGR21180EF TriQuint Semiconductor RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Part Life Cycle Code Transferred
Ihs Manufacturer TRIQUINT SEMICONDUCTOR INC
Package Description FLANGE MOUNT, R-CDFM-F4
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND
JESD-30 Code R-CDFM-F4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for AGR21180EF

This table gives cross-reference parts and alternative options found for AGR21180EF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AGR21180EF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AGR21180EF RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-4 LSI Corporation AGR21180EF vs AGR21180EF
Part Number Description Manufacturer Compare
AGR21180EF RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-4 LSI Corporation AGR21180EF vs AGR21180EF
AGR21180EU S BAND, Si, N-CHANNEL, RF POWER, MOSFET, SURFACE MOUNT PACKAGE-4 Avago Technologies AGR21180EF vs AGR21180EU
AGR21180EU RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SURFACE MOUNT PACKAGE-4 Broadcom Limited AGR21180EF vs AGR21180EU

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