Datasheets
AGR21180EF by:

S BAND, Si, N-CHANNEL, RF POWER, MOSFET, FM-4

Part Details for AGR21180EF by Avago Technologies

Overview of AGR21180EF by Avago Technologies

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Automotive Consumer Electronics Education and Research Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Renewable Energy Entertainment and Gaming Robotics and Drones

Part Details for AGR21180EF

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AGR21180EF Part Data Attributes

AGR21180EF Avago Technologies
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AGR21180EF Avago Technologies S BAND, Si, N-CHANNEL, RF POWER, MOSFET, FM-4
Part Life Cycle Code Active
Ihs Manufacturer AVAGO TECHNOLOGIES INC
Package Description FLANGE MOUNT, R-CDFM-F4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND
JESD-30 Code R-CDFM-F4
JESD-609 Code e0
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 500 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for AGR21180EF

This table gives cross-reference parts and alternative options found for AGR21180EF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AGR21180EF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AGR21180EF RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-4 Broadcom Limited AGR21180EF vs AGR21180EF
AGR21180EF RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-4 LSI Corporation AGR21180EF vs AGR21180EF
Part Number Description Manufacturer Compare
AGR21180EF RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, Qorvo AGR21180EF vs AGR21180EF
AGR21180EF RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-4 Broadcom Limited AGR21180EF vs AGR21180EF
AGR21180EU S BAND, Si, N-CHANNEL, RF POWER, MOSFET, SURFACE MOUNT PACKAGE-4 Avago Technologies AGR21180EF vs AGR21180EU
AGR21180EF RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-4 LSI Corporation AGR21180EF vs AGR21180EF

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