Part Details for AFV121KHSR5 by NXP Semiconductors
Overview of AFV121KHSR5 by NXP Semiconductors
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Price & Stock for AFV121KHSR5
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
60Y1464
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Newark | Airfast Rf Power Ldmos Transistor, 1000 W Peak, 960-1215 Mhz, 50 V/ Reel Rohs Compliant: Yes |Nxp AFV121KHSR5 RoHS: Compliant Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$541.5100 | Buy Now |
DISTI #
AFV121KHSR5-ND
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DigiKey | RF MOSFET LDMOS 50V NI1230 Min Qty: 50 Lead time: 10 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$562.0344 | Buy Now |
DISTI #
AFV121KHSR5
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Avnet Americas | Trans MOSFET N-CH -0.5V/112V 4-Pin NI-1230S Box - Tape and Reel (Alt: AFV121KHSR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$500.1704 / $549.7741 | Buy Now |
DISTI #
841-AFV121KHSR5
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Mouser Electronics | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V RoHS: Compliant | 0 |
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$534.3900 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks Container: Reel | 0Reel |
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$504.1100 | Buy Now |
DISTI #
AFV121KHSR5
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Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 50 | 0 |
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$526.3800 | Buy Now |
DISTI #
AFV121KHSR5
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EBV Elektronik | Trans MOSFET N-CH -0.5V/112V 4-Pin NI-1230S Box (Alt: AFV121KHSR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for AFV121KHSR5
AFV121KHSR5 CAD Models
AFV121KHSR5 Part Data Attributes
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AFV121KHSR5
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
AFV121KHSR5
NXP Semiconductors
RF SMALL SIGNAL, FET
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00 | |
Factory Lead Time | 10 Weeks | |
Case Connection | SOURCE | |
Configuration | COMMON SOURCE, 2 ELEMENTS | |
DS Breakdown Voltage-Min | 112 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 2.5 pF | |
Highest Frequency Band | L BAND | |
JESD-30 Code | R-CDFM-F4 | |
Number of Elements | 2 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 225 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Gain-Min (Gp) | 18.5 dB | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |