Datasheets
AFV121KHSR5 by:

RF SMALL SIGNAL, FET

Part Details for AFV121KHSR5 by NXP Semiconductors

Overview of AFV121KHSR5 by NXP Semiconductors

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Applications Industrial Automation

Price & Stock for AFV121KHSR5

Part # Distributor Description Stock Price Buy
DISTI # 60Y1464
Newark Airfast Rf Power Ldmos Transistor, 1000 W Peak, 960-1215 Mhz, 50 V/ Reel Rohs Compliant: Yes |Nxp AFV121KHSR5 RoHS: Compliant Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 25 $541.5100
$541.5100 Buy Now
DISTI # AFV121KHSR5-ND
DigiKey RF MOSFET LDMOS 50V NI1230 Min Qty: 50 Lead time: 10 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 50 $562.0344
$562.0344 Buy Now
DISTI # AFV121KHSR5
Avnet Americas Trans MOSFET N-CH -0.5V/112V 4-Pin NI-1230S Box - Tape and Reel (Alt: AFV121KHSR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 50 $549.7741
  • 100 $537.3732
  • 200 $524.9723
  • 300 $512.5714
  • 400 $500.1704
$500.1704 / $549.7741 Buy Now
DISTI # 841-AFV121KHSR5
Mouser Electronics RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V RoHS: Compliant 0
  • 50 $534.3900
$534.3900 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks Container: Reel 0
Reel
  • 50 $504.1100
$504.1100 Buy Now
DISTI # AFV121KHSR5
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 50 0
  • 50 $526.3800
$526.3800 Buy Now
DISTI # AFV121KHSR5
EBV Elektronik Trans MOSFET N-CH -0.5V/112V 4-Pin NI-1230S Box (Alt: AFV121KHSR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks, 0 Days EBV - 0
Buy Now

Part Details for AFV121KHSR5

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AFV121KHSR5 Part Data Attributes

AFV121KHSR5 NXP Semiconductors
Buy Now Datasheet
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AFV121KHSR5 NXP Semiconductors RF SMALL SIGNAL, FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00
Factory Lead Time 10 Weeks
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 112 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 2.5 pF
Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 225 °C
Operating Temperature-Min -40 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 18.5 dB
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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