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AF2301WL by:

Transistor,

Part Details for AF2301WL by Diodes Incorporated

Overview of AF2301WL by Diodes Incorporated

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Applications Consumer Electronics

Part Details for AF2301WL

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AF2301WL Part Data Attributes

AF2301WL Diodes Incorporated
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AF2301WL Diodes Incorporated Transistor,
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 2.6 A
Drain-source On Resistance-Max 0.13 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 1.38 W
Power Dissipation-Max (Abs) 1.38 W
Pulsed Drain Current-Max (IDM) 10 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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