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Transistors / RF Power Field-Effect Transistors / A5G23H110NT4
Datasheets
A5G23H110NT4 by: NXP Semiconductors

RF Power Field-Effect Transistor

Part Details for A5G23H110NT4 by NXP Semiconductors

Overview of A5G23H110NT4 by NXP Semiconductors

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Price & Stock for A5G23H110NT4

Part # Distributor Description Stock Price Buy
DISTI # 57AK6546
Newark Airfast Rf Power Gan Amplifier, 2300-2400 Mhz, 13.8 W Avg., 48 V/ Reel Rohs Compliant: Yes |Nxp A5G23H110NT4 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 400 $29.3700
$29.3700 Buy Now
DISTI # 568-A5G23H110NT4TR-ND
DigiKey RF MOSFET 48V 6DFN Min Qty: 2500 Lead time: 18 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 2,500 $31.7750
$31.7750 Buy Now
DISTI # A5G23H110NT4
Avnet Americas Transistor RF FET N-CH 125V 13.3A 6-Pin DFN T/R - Tape and Reel (Alt: A5G23H110NT4) Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 2,500 $32.8239
  • 5,000 $32.0835
  • 10,000 $31.3431
  • 15,000 $30.6027
  • 20,000 $29.8623
$29.8623 / $32.8239 Buy Now
DISTI # 771-A5G23H110NT4
Mouser Electronics GaN FETs Airfast RF Power GaN Amplifier, 2300-2400 MHz, 13.8 W Avg., 48 V RoHS: Compliant 0
  • 2,500 $30.8300
$30.8300 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $30.1000
$30.1000 Buy Now
DISTI # A5G23H110NT4
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $32.2300
$32.2300 Buy Now

Part Details for A5G23H110NT4

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A5G23H110NT4 Part Data Attributes

Parametric Data
A5G23H110NT4 NXP Semiconductors
Buy Now Datasheet
Compare Parts:
A5G23H110NT4 NXP Semiconductors RF Power Field-Effect Transistor
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NXP SEMICONDUCTORS
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Moisture Sensitivity Level 3
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40

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