934060922118
NXP Semiconductors
Description: L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3

Overview of 934060922118 by NXP Semiconductors

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Where used in Applications: Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

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Part Data Attributes for 934060922118 by NXP Semiconductors

934060922118
NXP Semiconductors
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
Package Description
FLATPACK, R-CDFP-F2
Reach Compliance Code
unknown
ECCN Code
EAR99
Case Connection
SOURCE
Configuration
SINGLE
DS Breakdown Voltage-Min
65 V
Drain Current-Max (ID)
18 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
L BAND
JESD-30 Code
R-CDFP-F2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLATPACK
Polarity/Channel Type
N-CHANNEL
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Want to compare parts?
  1. 934060922118
    NXP Semiconductors
    L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3
    VS

Alternate Parts for 934060922118

This table gives cross-reference parts and alternative options found for 934060922118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 934060922118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BLF6G20LS-75,118 BLF6G20LS-75 NXP Semiconductors 934060922118 vs BLF6G20LS-75,118
Part Number Description Manufacturer Compare
BLF6G20LS-110,112 RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 Ampleon 934060922118 vs BLF6G20LS-110,112
BLF6G20-45,135 BLF6G20-45 NXP Semiconductors 934060922118 vs BLF6G20-45,135
BLF7G20LS-90P RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4 Ampleon 934060922118 vs BLF7G20LS-90P
BLF6G20LS-110 RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 Ampleon 934060922118 vs BLF6G20LS-110
BLF6G20-45,112 BLF6G20-45 NXP Semiconductors 934060922118 vs BLF6G20-45,112
934064344118 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET NXP Semiconductors 934060922118 vs 934064344118
BLF6G20LS-75,118 BLF6G20LS-75 NXP Semiconductors 934060922118 vs BLF6G20LS-75,118
BLF6G20-75 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3 NXP Semiconductors 934060922118 vs BLF6G20-75
934060922112 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3 NXP Semiconductors 934060922118 vs 934060922112
BLF6G20LS-110,118 RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 Ampleon 934060922118 vs BLF6G20LS-110,118

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