Datasheets
80-M2126PA050M7-K718F70 by: Vincotech

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-39

Part Details for 80-M2126PA050M7-K718F70 by Vincotech

Overview of 80-M2126PA050M7-K718F70 by Vincotech

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Applications Consumer Electronics Education and Research Internet of Things (IoT) Smart Cities Aerospace and Defense Agriculture Technology Robotics and Drones

Price & Stock for 80-M2126PA050M7-K718F70

Part # Distributor Description Stock Price Buy
DISTI # M2126PA050M7
Richardson RFPD POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 288 0
  • 288 $41.9900
$41.9900 Buy Now

Part Details for 80-M2126PA050M7-K718F70

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80-M2126PA050M7-K718F70 Part Data Attributes

80-M2126PA050M7-K718F70 Vincotech
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80-M2126PA050M7-K718F70 Vincotech Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-39
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer VINCOTECH GMBH
Package Description MODULE-39
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 50 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-Emitter Thr Voltage-Max 6.6 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X39
Number of Elements 6
Number of Terminals 39
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 153 W
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 363 ns
Turn-on Time-Nom (ton) 250 ns
VCEsat-Max 1.9 V

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