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7200L30TDB by:

256 x 9 AsyncFIFO, 5.0V, CDIP13/Tube

Part Details for 7200L30TDB by Renesas Electronics Corporation

Overview of 7200L30TDB by Renesas Electronics Corporation

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Price & Stock for 7200L30TDB

Part # Distributor Description Stock Price Buy
DISTI # 7200L30TDB
Avnet Silica 256 x 9 AsyncFIFO, 5.0V (Alt: 7200L30TDB) RoHS: Not Compliant Min Qty: 130 Package Multiple: 13 Lead time: 37 Weeks, 0 Days Silica - 0
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Part Details for 7200L30TDB

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7200L30TDB Part Data Attributes:

7200L30TDB Renesas Electronics Corporation
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7200L30TDB Renesas Electronics Corporation 256 x 9 AsyncFIFO, 5.0V, CDIP13/Tube
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code CDIP
Package Description CERAMIC, DIP-28
Pin Count 28
Manufacturer Package Code SD28
Reach Compliance Code not_compliant
ECCN Code NLR
HTS Code 8542320071
Samacsys Manufacturer Renesas Electronics
Access Time-Max 30 ns
Additional Feature RETRANSMIT
Clock Frequency-Max (fCLK) 25 MHz
Cycle Time 40 ns
JESD-30 Code R-GDIP-T28
JESD-609 Code e0
Length 37.1475 mm
Memory Density 2304 bit
Memory IC Type OTHER FIFO
Memory Width 9
Moisture Sensitivity Level 1
Number of Functions 1
Number of Terminals 28
Number of Words 256 words
Number of Words Code 256
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Organization 256X9
Output Enable NO
Package Body Material CERAMIC, GLASS-SEALED
Package Code DIP
Package Equivalence Code DIP28,.3
Package Shape RECTANGULAR
Package Style IN-LINE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 240
Qualification Status Not Qualified
Screening Level MIL-STD-883 Class B
Seated Height-Max 5.08 mm
Standby Current-Max 0.0009 A
Supply Current-Max 0.14 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount NO
Technology CMOS
Temperature Grade MILITARY
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL
Width 7.62 mm

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