Datasheets
6MS10017E41W36460BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor,

Part Details for 6MS10017E41W36460BOSA1 by Infineon Technologies AG

Overview of 6MS10017E41W36460BOSA1 by Infineon Technologies AG

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech)

Price & Stock for 6MS10017E41W36460BOSA1

Part # Distributor Description Stock Price Buy
DISTI # SP000939300
EBV Elektronik Trans IGBT Module N-CH 1.7KV A-MS1-1 (Alt: SP000939300) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 71 Weeks, 0 Days EBV - 0
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Part Details for 6MS10017E41W36460BOSA1

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6MS10017E41W36460BOSA1 Part Data Attributes:

6MS10017E41W36460BOSA1 Infineon Technologies AG
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6MS10017E41W36460BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector-Emitter Voltage-Max 1700 V
Configuration COMPLEX
JESD-30 Code R-XXMA-X
Number of Elements 6
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UNSPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON

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