Datasheets
6MBI75F-060 by: Fuji Electric Co Ltd

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, M616, 19 PIN

Part Details for 6MBI75F-060 by Fuji Electric Co Ltd

Overview of 6MBI75F-060 by Fuji Electric Co Ltd

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Part Details for 6MBI75F-060

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6MBI75F-060 Part Data Attributes:

6MBI75F-060 Fuji Electric Co Ltd
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6MBI75F-060 Fuji Electric Co Ltd Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, M616, 19 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer COLLMER SEMICONDUCTOR INC
Package Description FLANGE MOUNT, R-XUFM-X19
Pin Count 19
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW SATURATION VOLTAGE
Collector Current-Max (IC) 75 A
Collector-Emitter Voltage-Max 600 V
JESD-30 Code R-XUFM-X19
Number of Elements 6
Number of Terminals 19
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1500 ns
Turn-on Time-Nom (ton) 800 ns

Alternate Parts for 6MBI75F-060

This table gives cross-reference parts and alternative options found for 6MBI75F-060. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 6MBI75F-060, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CM75TU-12F Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, Powerex Power Semiconductors 6MBI75F-060 vs CM75TU-12F
MWI50-06A7 Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES, N-Channel, MODULE-17 Littelfuse Inc 6MBI75F-060 vs MWI50-06A7
6MBI75FA-060 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel Fuji Electric Co Ltd 6MBI75F-060 vs 6MBI75FA-060
BSM75GP60 Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-24 Infineon Technologies AG 6MBI75F-060 vs BSM75GP60
CM75TU-12F Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, Mitsubishi Electric 6MBI75F-060 vs CM75TU-12F
6MBI50L-060 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, M616, 19 PIN Fuji Electric Co Ltd 6MBI75F-060 vs 6MBI50L-060
BSM75GD60DLCBOSA1 Insulated Gate Bipolar Transistor, 95A I(C), 600V V(BR)CES, N-Channel, MODULE-17 Infineon Technologies AG 6MBI75F-060 vs BSM75GD60DLCBOSA1
CM75TF-12H Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, Mitsubishi Electric 6MBI75F-060 vs CM75TF-12H
MG50J6ES1 TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, 2-94A2A, 19 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components 6MBI75F-060 vs MG50J6ES1
6MBI50FA-060 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel Fuji Electric Co Ltd 6MBI75F-060 vs 6MBI50FA-060

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