Datasheets
6116SA55TDB by:
Integrated Device Technology Inc
Integrated Device Technology Inc
Renesas Electronics Corporation
Not Found

CDIP-24, Tube

Part Details for 6116SA55TDB by Integrated Device Technology Inc

Results Overview of 6116SA55TDB by Integrated Device Technology Inc

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Applications Industrial Automation Renewable Energy Robotics and Drones

6116SA55TDB Information

6116SA55TDB by Integrated Device Technology Inc is an SRAM.
SRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
6116SA55TDB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube

Price & Stock for 6116SA55TDB

Part # Distributor Description Stock Price Buy
Bristol Electronics   255
RFQ

Part Details for 6116SA55TDB

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6116SA55TDB Part Data Attributes

6116SA55TDB Integrated Device Technology Inc
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6116SA55TDB Integrated Device Technology Inc CDIP-24, Tube
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Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTEGRATED DEVICE TECHNOLOGY INC
Part Package Code CDIP
Package Description DIP-24
Pin Count 24
Manufacturer Package Code SD24
Reach Compliance Code not_compliant
ECCN Code 3A001.A.2.C
HTS Code 8542.32.00.41
Date Of Intro 1988-01-01
Access Time-Max 55 ns
I/O Type COMMON
JESD-30 Code R-CDIP-T24
JESD-609 Code e0
Length 32.004 mm
Memory Density 16384 bit
Memory IC Type STANDARD SRAM
Memory Width 8
Moisture Sensitivity Level 1
Number of Functions 1
Number of Terminals 24
Number of Words 2048 words
Number of Words Code 2000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Organization 2KX8
Output Characteristics 3-STATE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Code DIP
Package Equivalence Code DIP24,.3
Package Shape RECTANGULAR
Package Style IN-LINE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 240
Qualification Status Not Qualified
Screening Level MIL-STD-883 Class B
Seated Height-Max 5.08 mm
Standby Current-Max 0.01 A
Standby Voltage-Min 4.5 V
Supply Current-Max 0.1 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount NO
Technology CMOS
Temperature Grade MILITARY
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL
Width 7.62 mm

Alternate Parts for 6116SA55TDB

This table gives cross-reference parts and alternative options found for 6116SA55TDB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 6116SA55TDB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
HM1-65728BN-2 Atmel Corporation Check for Price STANDARD SRAM 6116SA55TDB vs HM1-65728BN-2
8403611LX QP Semiconductor Check for Price Standard SRAM, 2KX8, 55ns, CMOS, CDIP24, CERAMIC, DIP-24 6116SA55TDB vs 8403611LX
IDT6116SA55TDB Integrated Device Technology Inc Check for Price Standard SRAM, 2KX8, 55ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24 6116SA55TDB vs IDT6116SA55TDB
Part Number Manufacturer Composite Price Description Compare
8403610LA Integrated Device Technology Inc Check for Price CDIP-24, Tube 6116SA55TDB vs 8403610LA

6116SA55TDB Related Parts

6116SA55TDB Frequently Asked Questions (FAQ)

  • A good PCB layout for the 6116SA55TDB should consider signal integrity, power integrity, and thermal management. Keep the signal traces short and away from noise sources, use a solid ground plane, and ensure proper decoupling capacitors are placed close to the device. Additionally, consider thermal vias and heat sinks to dissipate heat effectively.

  • The 6116SA55TDB requires a stable power supply with minimal noise and ripple. Use a high-quality power supply with a low equivalent series resistance (ESR) capacitor. Decouple the device with a 0.1uF ceramic capacitor and a 10uF electrolytic capacitor in parallel, placed as close to the device as possible. Ensure the power supply can provide the required current and voltage.

  • The 6116SA55TDB has a maximum junction temperature of 150°C. Ensure good airflow around the device, and consider using a heat sink with a thermal interface material (TIM) to reduce thermal resistance. Use thermal vias in the PCB to dissipate heat, and avoid placing heat-sensitive components near the device.

  • To troubleshoot issues with the 6116SA55TDB, start by verifying the power supply and decoupling. Check for proper signal integrity and ensure the device is properly configured. Use oscilloscopes and logic analyzers to debug signal issues. Consult the datasheet and application notes for specific troubleshooting guidelines.

  • The 6116SA55TDB is a high-frequency device and can be susceptible to EMI and RFI. Use shielding, grounding, and filtering techniques to minimize electromagnetic interference. Ensure the PCB layout is designed to reduce radiation and susceptibility. Follow proper EMI and RFI design guidelines to ensure compliance with regulatory standards.