Part Details for 5SNS0200V120000 by ABB Semiconductors
Overview of 5SNS0200V120000 by ABB Semiconductors
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Part Details for 5SNS0200V120000
5SNS0200V120000 CAD Models
5SNS0200V120000 Part Data Attributes
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5SNS0200V120000
ABB Semiconductors
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Datasheet
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5SNS0200V120000
ABB Semiconductors
Insulated Gate Bipolar Transistor,
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Part Life Cycle Code | Active | |
Ihs Manufacturer | ABB LTD | |
Package Description | FLANGE MOUNT, R-PUFM-X37 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 200 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-PUFM-X37 | |
Number of Elements | 6 | |
Number of Terminals | 37 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 830 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 650 ns | |
Turn-on Time-Nom (ton) | 480 ns | |
VCEsat-Max | 2.8 V |