Part Details for 5N120 by STMicroelectronics
Results Overview of 5N120 by STMicroelectronics
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- Number of FFF Equivalents: (0 replacements)
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- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Not Available)
- Reference Designs: (Not Available)
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5N120 Information
5N120 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| TRS15N120HB | Toshiba Electronic Devices & Storage Corporation | SiC Schottky Barrier Diode (SBD), 1200 V, 15 A, 2 in 1, TO-247 | |
| TW045N120C | Toshiba Electronic Devices & Storage Corporation | N-ch SiC MOSFET, 1200 V, 40 A, 0.059 Ω@18 V, TO-247 | |
| TW015N120C | Toshiba Electronic Devices & Storage Corporation | N-ch SiC MOSFET, 1200 V, 100 A, 0.020 Ω@18 V, TO-247 |