5962-9315401HXC by:

EEPROM Module, 128KX8, 200ns, Parallel, CMOS, CDIP32, SINGLE CAVITY, SIDE BRAZED, HERMETIC SEALED, CERAMIC, DIP-32

Part Details for 5962-9315401HXC by Microsemi Corporation

Overview of 5962-9315401HXC by Microsemi Corporation

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Applications Aerospace and Defense Transportation and Logistics Automotive

Available Datasheets

Part # Manufacturer Description Datasheet
5962-8672601EA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL, 0.250 X 0.875 INCH, DIP-16
5962-8672601FA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL, 0.250 X 0.375 INCH, FP-16
5962-87518013A Rochester Electronics LLC Interrupt Controller, NMOS, CQCC28, CERAMIC, LCC-28

Part Details for 5962-9315401HXC

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5962-9315401HXC Part Data Attributes

5962-9315401HXC Microsemi Corporation
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5962-9315401HXC Microsemi Corporation EEPROM Module, 128KX8, 200ns, Parallel, CMOS, CDIP32, SINGLE CAVITY, SIDE BRAZED, HERMETIC SEALED, CERAMIC, DIP-32
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Part Package Code DIP
Package Description DIP,
Pin Count 32
Reach Compliance Code compliant
ECCN Code 3A001.A.2.C
HTS Code 8542.32.00.51
Access Time-Max 200 ns
Additional Feature AUTOMATIC WRITE
JESD-30 Code R-CDIP-T32
JESD-609 Code e4
Length 42.4 mm
Memory Density 1048576 bit
Memory IC Type EEPROM MODULE
Memory Width 8
Number of Functions 1
Number of Terminals 32
Number of Words 131072 words
Number of Words Code 128000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Organization 128KX8
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Code DIP
Package Shape RECTANGULAR
Package Style IN-LINE
Parallel/Serial PARALLEL
Programming Voltage 5 V
Qualification Status Not Qualified
Seated Height-Max 5.1 mm
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount NO
Technology CMOS
Temperature Grade MILITARY
Terminal Finish GOLD
Terminal Form THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL
Width 15.24 mm

Alternate Parts for 5962-9315401HXC

This table gives cross-reference parts and alternative options found for 5962-9315401HXC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 5962-9315401HXC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
28C010TRT2DI-20 EEPROM, 128KX8, 200ns, Parallel, CMOS, DIP-32 Maxwell Technologies 5962-9315401HXC vs 28C010TRT2DI-20
28C010TRT4DE-20 EEPROM, 128KX8, 200ns, Parallel, CMOS, DIP-32 Maxwell Technologies 5962-9315401HXC vs 28C010TRT4DE-20
28C010TRT1DS-20 EEPROM, 128KX8, 200ns, Parallel, CMOS, DIP-32 Maxwell Technologies 5962-9315401HXC vs 28C010TRT1DS-20
5962-9315401HXA EEPROM Module, 128KX8, 200ns, Parallel, CMOS, CDIP32, SINGLE CAVITY, SIDE BRAZED, HERMETIC SEALED, CERAMIC, DIP-32 Microsemi Corporation 5962-9315401HXC vs 5962-9315401HXA
28C010TRT4DB-20 EEPROM, 128KX8, 200ns, Parallel, CMOS, DIP-32 Maxwell Technologies 5962-9315401HXC vs 28C010TRT4DB-20
28C010TRT2DS-20 EEPROM, 128KX8, 200ns, Parallel, CMOS, DIP-32 Maxwell Technologies 5962-9315401HXC vs 28C010TRT2DS-20
28C010TRT2DB-20 EEPROM, 128KX8, 200ns, Parallel, CMOS, DIP-32 Maxwell Technologies 5962-9315401HXC vs 28C010TRT2DB-20
28C010TRT1DE-20 EEPROM, 128KX8, 200ns, Parallel, CMOS, DIP-32 Maxwell Technologies 5962-9315401HXC vs 28C010TRT1DE-20
Part Number Description Manufacturer Compare
CAT28F010V5P-12 Flash, 128KX8, 120ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32 Catalyst Semiconductor 5962-9315401HXC vs CAT28F010V5P-12
5962-8961401MXA UVPROM, 128KX8, 300ns, CMOS, CDIP32, CERAMIC, DIP-32 QP Semiconductor 5962-9315401HXC vs 5962-8961401MXA
CAT28F001LI-12T Flash, 128KX8, 120ns, PDIP32, LEAD AND HALOGEN FREE, PLASTIC, DIP-32 Catalyst Semiconductor 5962-9315401HXC vs CAT28F001LI-12T
WME128K8-140CIA EEPROM, 128KX8, 140ns, Parallel, CMOS, CDIP32, 0.600 INCH, HERMETIC SEALED, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32 Microsemi Corporation 5962-9315401HXC vs WME128K8-140CIA
WME128K8-150CIA EEPROM, 128KX8, 150ns, Parallel, CMOS, CDIP32, 0.600 INCH, HERMETIC SEALED, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32 Microsemi Corporation 5962-9315401HXC vs WME128K8-150CIA
28C010TRT1DS-12 EEPROM, 128KX8, 120ns, Parallel, CMOS, DIP-32 Maxwell Technologies 5962-9315401HXC vs 28C010TRT1DS-12
CAT28F010LA-90 Flash, 128KX8, 90ns, PDIP32, LEAD AND HALOGEN FREE, PLASTIC, DIP-32 Catalyst Semiconductor 5962-9315401HXC vs CAT28F010LA-90
WME128K8-150CIEA EEPROM, 128KX8, 150ns, Parallel, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-32 Microsemi Corporation 5962-9315401HXC vs WME128K8-150CIEA
AT27C010-45PJ OTP ROM, 128KX8, 45ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32 Atmel Corporation 5962-9315401HXC vs AT27C010-45PJ
HN62331AP-12 128KX8 MASK PROM, 120ns, PDIP32, PLASTIC, DIP-32 Renesas Electronics Corporation 5962-9315401HXC vs HN62331AP-12

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