Part Details for 3N157 by Texas Instruments
Overview of 3N157 by Texas Instruments
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Part Details for 3N157
3N157 CAD Models
3N157 Part Data Attributes
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3N157
Texas Instruments
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3N157
Texas Instruments
30mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | CYLINDRICAL, O-MBCY-W4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Case Connection | SUBSTRATE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 50 V | |
Drain Current-Max (ID) | 0.03 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 1.3 pF | |
JEDEC-95 Code | TO-72 | |
JESD-30 Code | O-MBCY-W4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 0.3 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |