30N06 by:
Infineon Technologies AG
Aces Electronics Co Ltd
Amphenol Communications Solutions
Amphenol FCi
Avago Technologies
Broadcom Limited
Eupec Gmbh & Co Kg
Fairchild Semiconductor Corporation
Freescale Semiconductor
Goodwork Semiconductor Co Ltd
Harris Semiconductor
HXY
Infineon Technologies AG
Intersil Corporation
IXYS Corporation
JUXING Electronics
Littelfuse Inc
Mercury Electronic Ind Co Ltd
Micro Commercial Components
Motorola Mobility LLC
Motorola Semiconductor Products
National Semiconductor Corporation
NEC Electronics Group
NetPower Technologies Inc
onsemi
Renesas Electronics Corporation
Rochester Electronics LLC
ROHM Semiconductor
Secos Corporation
Shantou Huashan Electronic Devices Co Ltd
SiTime Corporation
STMicroelectronics
Taiwan Semiconductor
Tech Public
Texas Instruments
UMW
Unisonic Technologies Co Ltd
Western Electronic Components Corp
Yangzhou Yangjie Electronics Co Ltd
Not Found

Part Details for 30N06 by Infineon Technologies AG

Results Overview of 30N06 by Infineon Technologies AG

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30N06 Information

30N06 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
NP30N06QDK-E1-AY Renesas Electronics Corporation 60 V - 30 A - Dual N-channel Power MOS FET, HSON, /Embossed Tape

Part Details for 30N06

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