Part Details for 2SK782 by Panasonic Electronic Components
Overview of 2SK782 by Panasonic Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 2SK782
2SK782 CAD Models
2SK782 Part Data Attributes:
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2SK782
Panasonic Electronic Components
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Datasheet
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2SK782
Panasonic Electronic Components
Power Field-Effect Transistor, 5A I(D), 200V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, N TYPE PACKAGE-3
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | PANASONIC CORP | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 0.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2SK782
This table gives cross-reference parts and alternative options found for 2SK782. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK782, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSP120TA | Power Field-Effect Transistor, 0.25A I(D), 200V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Diodes Incorporated | 2SK782 vs BSP120TA |
| IRFR220A | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Fairchild Semiconductor Corporation | 2SK782 vs IRFR220A |
| IRFR221 | 4.6A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | 2SK782 vs IRFR221 |
| FQD4N20TM | N-Channel QFET® MOSFET 200V, 3A, 1.4Ω, 2500-REEL | onsemi | 2SK782 vs FQD4N20TM |
| IRLR220A | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Samsung Semiconductor | 2SK782 vs IRLR220A |
| IRFR222 | Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Samsung Semiconductor | 2SK782 vs IRFR222 |
| IRFW610A | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Samsung Semiconductor | 2SK782 vs IRFW610A |
| FQB4N20 | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | 2SK782 vs FQB4N20 |
| BSP297 | Power Field-Effect Transistor, 0.6A I(D), 200V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Siemens | 2SK782 vs BSP297 |
| 2SK1335(S)TL | Power Field-Effect Transistor, 3A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Hitachi Ltd | 2SK782 vs 2SK1335(S)TL |