Datasheets
2SK526 by:
Toshiba America Electronic Components
Hongxing Electrical Ltd
Toshiba America Electronic Components
Not Found

TRANSISTOR 10 A, 250 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

Part Details for 2SK526 by Toshiba America Electronic Components

Results Overview of 2SK526 by Toshiba America Electronic Components

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2SK526 Information

2SK526 by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2SK526

Part # Distributor Description Stock Price Buy
Bristol Electronics   547
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 250V, 0.6OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SE... MICONDUCTOR FET more 93
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Part Details for 2SK526

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2SK526 Part Data Attributes

2SK526 Toshiba America Electronic Components
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2SK526 Toshiba America Electronic Components TRANSISTOR 10 A, 250 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Reach Compliance Code unknown
Case Connection ISOLATED
Configuration SINGLE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 40 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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