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Transistors / Power Field-Effect Transistors / 2SK4066-1E
Datasheets
2SK4066-1E by:
onsemi
onsemi
SANYO Semiconductor Co Ltd
Not Found

N-Channel Power MOSFET, 60V, 100A, 4.7mΩ, TO-262-3L/TO-263-2L, I2PAK / TO-262-3L, 50-TUBE

Part Details for 2SK4066-1E by onsemi

Results Overview of 2SK4066-1E by onsemi

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2SK4066-1E Information

2SK4066-1E by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2SK4066-1E

Part # Distributor Description Stock Price Buy
DISTI # 85956183
Verical Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) I2PAK Tube Min Qty: 169 Package Multiple: 1 Date Code: 1601 Americas - 10700
  • 169 $2.2250
  • 500 $2.1250
  • 1,000 $2.0125
$2.0125 / $2.2250 Buy Now
DISTI # 85956169
Verical Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) I2PAK Tube Min Qty: 169 Package Multiple: 1 Date Code: 1501 Americas - 3534
  • 169 $2.2250
  • 500 $2.1250
  • 1,000 $2.0125
$2.0125 / $2.2250 Buy Now
DISTI # 85956399
Verical Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) I2PAK Tube Min Qty: 169 Package Multiple: 1 Americas - 249
  • 169 $2.2250
  • 500 $2.1250
  • 1,000 $2.0125
$2.0125 / $2.2250 Buy Now
Rochester Electronics Power Field-Effect Transistor, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 14483
  • 1 $1.8900
  • 25 $1.8500
  • 100 $1.7800
  • 500 $1.7000
  • 1,000 $1.6100
$1.6100 / $1.8900 Buy Now
DISTI # 2SK4066-1E
Avnet Silica (Alt: 2SK4066-1E) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days Silica - 0
Buy Now

Part Details for 2SK4066-1E

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2SK4066-1E Part Data Attributes

Parametric Data
2SK4066-1E onsemi
Buy Now Datasheet
Compare Parts:
2SK4066-1E onsemi N-Channel Power MOSFET, 60V, 100A, 4.7mΩ, TO-262-3L/TO-263-2L, I2PAK / TO-262-3L, 50-TUBE
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Manufacturer Package Code 418AN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Configuration SINGLE
Drain Current-Max (ID) 100 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Number of Elements 1
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 90 W
Surface Mount NO
Terminal Finish TIN

2SK4066-1E Related Parts

2SK4066-1E Frequently Asked Questions (FAQ)

  • A good PCB layout for optimal thermal performance would involve placing the device on a thick copper plane, using thermal vias to dissipate heat, and keeping the thermal path as short as possible. A 2-layer or 4-layer board with a solid ground plane is recommended.

  • To ensure proper biasing, make sure to follow the recommended operating conditions in the datasheet, including the gate-source voltage (Vgs) and drain-source voltage (Vds). Also, ensure that the gate drive circuit is capable of providing the required current and voltage to switch the device on and off efficiently.

  • During reliability testing, it's essential to monitor parameters such as junction temperature (Tj), drain-source voltage (Vds), gate-source voltage (Vgs), and drain current (Id) to ensure the device operates within its safe operating area (SOA).

  • To prevent latch-up and parasitic thyristor activation, ensure that the device is properly biased, and the gate drive circuit is designed to prevent voltage spikes and ringing. Also, use a gate resistor (Rg) to slow down the gate voltage transition and prevent latch-up.

  • To protect the 2SK4066-1E from electrostatic discharge (ESD), use ESD-sensitive handling procedures, and consider adding ESD protection devices such as TVS diodes or ESD protection arrays to the PCB design.