Part Details for 2SK3772-01 by Fuji Electric Co Ltd
Overview of 2SK3772-01 by Fuji Electric Co Ltd
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for 2SK3772-01
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
98K6294
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Newark | Mosfet, N, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:300V, Continuous Drain Current Id:32A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Power Dissipation:270W Rohs Compliant: Yes |Fuji Electric 2SK3772-01 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for 2SK3772-01
2SK3772-01 CAD Models
2SK3772-01 Part Data Attributes
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2SK3772-01
Fuji Electric Co Ltd
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Datasheet
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2SK3772-01
Fuji Electric Co Ltd
Power Field-Effect Transistor, 32A I(D), 300V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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Part Life Cycle Code | Active | |
Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | FUJI ELECTRIC | |
Avalanche Energy Rating (Eas) | 597.4 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 300 V | |
Drain Current-Max (ID) | 32 A | |
Drain-source On Resistance-Max | 0.13 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 270 W | |
Pulsed Drain Current-Max (IDM) | 128 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |