Part Details for 2SK3535-01 by Fuji Electric Co Ltd
Overview of 2SK3535-01 by Fuji Electric Co Ltd
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Part Details for 2SK3535-01
2SK3535-01 CAD Models
2SK3535-01 Part Data Attributes
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2SK3535-01
Fuji Electric Co Ltd
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Datasheet
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2SK3535-01
Fuji Electric Co Ltd
Power Field-Effect Transistor, 3.4A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TFP, 4 PIN
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Part Life Cycle Code | Active | |
Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
Package Description | CHIP CARRIER, S-XBCC-N4 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 251.9 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 3.4 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-XBCC-N4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | SQUARE | |
Package Style | CHIP CARRIER | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 135 W | |
Pulsed Drain Current-Max (IDM) | 148 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |