Datasheets
2SK3296-S by:

35A, 20V, 0.019ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, 3 PIN

Part Details for 2SK3296-S by Renesas Electronics Corporation

Overview of 2SK3296-S by Renesas Electronics Corporation

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Part Details for 2SK3296-S

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2SK3296-S Part Data Attributes

2SK3296-S Renesas Electronics Corporation
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2SK3296-S Renesas Electronics Corporation 35A, 20V, 0.019ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, 3 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code TO-262AA
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.019 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 140 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2SK3296-S

This table gives cross-reference parts and alternative options found for 2SK3296-S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK3296-S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2SK2516-01L Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 50A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3 2SK3296-S vs 2SK2516-01L
H7N0310LD Hitachi Ltd Check for Price Power Field-Effect Transistor, 30A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 2SK3296-S vs H7N0310LD
2SK2957L Renesas Electronics Corporation Check for Price 50A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 2SK3296-S vs 2SK2957L
2SK2807-01L Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 35A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TPAK-3 2SK3296-S vs 2SK2807-01L
2SK2957(L) Hitachi Ltd Check for Price Power Field-Effect Transistor, 50A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 2SK3296-S vs 2SK2957(L)
2SK2688-01L Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 50A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3 2SK3296-S vs 2SK2688-01L
2SK2957L-E Renesas Electronics Corporation Check for Price 50A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 2SK3296-S vs 2SK2957L-E
2SK2957(L) Renesas Electronics Corporation Check for Price 50A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 2SK3296-S vs 2SK2957(L)

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