Datasheets
2SK2887 by: ROHM Semiconductor

Power Field-Effect Transistor, 3A I(D), 200V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for 2SK2887 by ROHM Semiconductor

Results Overview of 2SK2887 by ROHM Semiconductor

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2SK2887 Information

2SK2887 by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for 2SK2887

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2SK2887 Part Data Attributes

2SK2887 ROHM Semiconductor
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2SK2887 ROHM Semiconductor Power Field-Effect Transistor, 3A I(D), 200V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer ROHM CO LTD
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer ROHM Semiconductor
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 0.9 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 20 W
Pulsed Drain Current-Max (IDM) 12 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Copper (Sn/Cu)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2SK2887

This table gives cross-reference parts and alternative options found for 2SK2887. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2887, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2SK2887TL ROHM Semiconductor Check for Price Power Field-Effect Transistor, 3A I(D), 200V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CPT3, SC-63, 3 PIN 2SK2887 vs 2SK2887TL
Part Number Manufacturer Composite Price Description Compare
2SK2430TR ROHM Semiconductor Check for Price Power Field-Effect Transistor, 3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 2SK2887 vs 2SK2430TR
IRFR222 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 2SK2887 vs IRFR222
FS5VS-5 Mitsubishi Electric Check for Price Power Field-Effect Transistor, 5A I(D), 250V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 2SK2887 vs FS5VS-5
2SK214 Renesas Electronics Corporation Check for Price 0.5A, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN 2SK2887 vs 2SK214
PHD9NQ20T/T3 NXP Semiconductors Check for Price TRANSISTOR 8.7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power 2SK2887 vs PHD9NQ20T/T3
IRFR220A Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 2SK2887 vs IRFR220A
IRFR222 Intersil Corporation Check for Price 3.8A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 2SK2887 vs IRFR222
BSP121T/R NXP Semiconductors Check for Price TRANSISTOR 0.35 A, 200 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power 2SK2887 vs BSP121T/R
2SK215 Renesas Electronics Corporation Check for Price 0.5A, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN 2SK2887 vs 2SK215
BSP120 Diodes Incorporated Check for Price Power Field-Effect Transistor, 0.25A I(D), 200V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 2SK2887 vs BSP120

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