Datasheets
2SK2671 by: Shindengen Electronic Manufacturing Co Ltd

Power Field-Effect Transistor, 5A I(D), 900V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, FTO-220, 3 PIN

Part Details for 2SK2671 by Shindengen Electronic Manufacturing Co Ltd

Results Overview of 2SK2671 by Shindengen Electronic Manufacturing Co Ltd

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2SK2671 Information

2SK2671 by Shindengen Electronic Manufacturing Co Ltd is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2SK2671

Part # Distributor Description Stock Price Buy
Quest Components   168
  • 1 $4.5900
  • 23 $3.0600
  • 83 $2.8305
$2.8305 / $4.5900 Buy Now

Part Details for 2SK2671

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2SK2671 Part Data Attributes

2SK2671 Shindengen Electronic Manufacturing Co Ltd
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2SK2671 Shindengen Electronic Manufacturing Co Ltd Power Field-Effect Transistor, 5A I(D), 900V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, FTO-220, 3 PIN
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SHINDENGEN ELECTRIC MANUFACTURING CO LTD
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 100 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 900 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 2.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Moisture Sensitivity Level 2
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 40 W
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 350 ns
Turn-on Time-Max (ton) 100 ns

Alternate Parts for 2SK2671

This table gives cross-reference parts and alternative options found for 2SK2671. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2671, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2SK1549R Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 20A I(D), 250V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN 2SK2671 vs 2SK1549R
IXFH36N55Q2 Littelfuse Inc Check for Price Power Field-Effect Transistor, 36A I(D), 550V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 2SK2671 vs IXFH36N55Q2
2SK2160 SANYO Electric Co Ltd Check for Price Power Field-Effect Transistor, 7A I(D), 200V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, 3 PIN 2SK2671 vs 2SK2160
APT5020BVRG Microsemi Corporation Check for Price Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 2SK2671 vs APT5020BVRG
2SK2124 Panasonic Electronic Components Check for Price Power Field-Effect Transistor, 8A I(D), 450V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220E, 3 PIN 2SK2671 vs 2SK2124
2SK2563 Shindengen Electronic Manufacturing Co Ltd Check for Price Power Field-Effect Transistor, 4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, FTO-220, 3 PIN 2SK2671 vs 2SK2563
2SK2042TR ROHM Semiconductor Check for Price Power Field-Effect Transistor, 5A I(D), 450V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 2SK2671 vs 2SK2042TR
2SK3264-01MR Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 7A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F15, 3 PIN 2SK2671 vs 2SK3264-01MR
2SK4199LS SANYO Semiconductor Co Ltd Check for Price Power Field-Effect Transistor, 3A I(D), 650V, 3.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI-LS, 3 PIN 2SK2671 vs 2SK4199LS
2SK1885 SANYO Electric Co Ltd Check for Price Power Field-Effect Transistor, 35A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 2SK2671 vs 2SK1885

2SK2671 Related Parts

2SK2671 Frequently Asked Questions (FAQ)

  • The recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the package, using a large copper area for heat dissipation, and keeping the thermal path as short as possible. A minimum of 2oz copper thickness is recommended.

  • To ensure the device is properly biased, make sure to follow the recommended biasing circuit in the datasheet, and ensure that the gate-source voltage (Vgs) is within the recommended range of 2-4V. Also, ensure that the drain-source voltage (Vds) is within the recommended range of 10-30V.

  • To prevent damage, handle the device by the body and avoid touching the leads or pins. Use an anti-static wrist strap or mat when handling the device, and avoid exposing it to excessive moisture or temperature extremes.

  • Yes, the 2SK2671 can be used in high-frequency switching applications up to 100kHz. However, ensure that the device is properly biased and that the PCB layout is optimized for high-frequency operation. Also, consider using a gate driver IC to reduce switching losses.

  • The maximum power dissipation of the device can be determined by using the formula: Pd = (Vds x Id) + (Vgs x Ig). Ensure that the calculated power dissipation is within the recommended maximum power dissipation rating of 30W.