Datasheets
2SK2665 by: Shindengen Electronic Manufacturing Co Ltd

Power Field-Effect Transistor, 3A I(D), 900V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, STO-220, 3 PIN

Part Details for 2SK2665 by Shindengen Electronic Manufacturing Co Ltd

Overview of 2SK2665 by Shindengen Electronic Manufacturing Co Ltd

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Part Details for 2SK2665

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2SK2665 Part Data Attributes

2SK2665 Shindengen Electronic Manufacturing Co Ltd
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2SK2665 Shindengen Electronic Manufacturing Co Ltd Power Field-Effect Transistor, 3A I(D), 900V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, STO-220, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SHINDENGEN ELECTRIC MANUFACTURING CO LTD
Part Package Code SFM
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 48 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 900 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 4.7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 50 W
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 6 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 230 ns
Turn-on Time-Max (ton) 70 ns

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