Part Details for 2SK2607(F) by Toshiba America Electronic Components
Overview of 2SK2607(F) by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for 2SK2607(F)
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1218516
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element14 Asia-Pacific | MOSFET, N, TO-3P RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$1.9655 / $3.8497 | Buy Now |
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DISTI #
1218516
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Farnell | MOSFET, N, TO-3P RoHS: Compliant Min Qty: 1 Lead time: 12 Weeks, 4 Days Container: Each | 0 |
|
$2.5728 / $8.2707 | Buy Now |
Part Details for 2SK2607(F)
2SK2607(F) CAD Models
2SK2607(F) Part Data Attributes:
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2SK2607(F)
Toshiba America Electronic Components
Buy Now
Datasheet
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2SK2607(F)
Toshiba America Electronic Components
TRANSISTOR 9 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-16C1B, SC-65, 3 PIN, FET General Purpose Power
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Part Package Code | SC-65 | |
| Package Description | 2-16C1B, SC-65, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 778 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 27 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |