Part Details for 2SK2596BXTL-E by Renesas Electronics Corporation
Overview of 2SK2596BXTL-E by Renesas Electronics Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2SK2596BXTL-E
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-2SK2596BXTL-E-ND
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DigiKey | MOSFET N-CH Min Qty: 158 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
6900 In Stock |
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$1.9000 | Buy Now |
DISTI #
86083758
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Verical | 2SK2596BXTL-E Min Qty: 175 Package Multiple: 1 Date Code: 1601 | Americas - 6900 |
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$1.9500 / $2.1500 | Buy Now |
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Rochester Electronics | 2SK2596 - RF Power Field-Effect Transistor, Ultra High Frequency Band, N-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 6900 |
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$1.5600 / $1.8300 | Buy Now |
Part Details for 2SK2596BXTL-E
2SK2596BXTL-E CAD Models
2SK2596BXTL-E Part Data Attributes
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2SK2596BXTL-E
Renesas Electronics Corporation
Buy Now
Datasheet
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Compare Parts:
2SK2596BXTL-E
Renesas Electronics Corporation
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SC-62, UPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | RENESAS TECHNOLOGY CORP | |
Part Package Code | SC-62 | |
Package Description | SC-62, UPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Case Connection | SOURCE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 17 V | |
Drain Current-Max (ID) | 0.4 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-PSSO-F3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 20 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for 2SK2596BXTL-E
This table gives cross-reference parts and alternative options found for 2SK2596BXTL-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2596BXTL-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
2SK2596BX | Hitachi Ltd | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2SK2596BXTL-E vs 2SK2596BX |
2SK2596BXTR | Renesas Electronics Corporation | Check for Price | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | 2SK2596BXTL-E vs 2SK2596BXTR |
2SK2596BXTL | Hitachi Ltd | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2SK2596BXTL-E vs 2SK2596BXTL |
2SK2596BXTR | Hitachi Ltd | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2SK2596BXTL-E vs 2SK2596BXTR |
2SK2596 | Renesas Electronics Corporation | Check for Price | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, UPAK-3 | 2SK2596BXTL-E vs 2SK2596 |
2SK2596BXUR | Hitachi Ltd | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2SK2596BXTL-E vs 2SK2596BXUR |
2SK2596BXUL | Hitachi Ltd | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2SK2596BXTL-E vs 2SK2596BXUL |