Datasheets
2SK2503TL by: ROHM Semiconductor

Power Field-Effect Transistor, 5A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CPT3, 3 PIN

Part Details for 2SK2503TL by ROHM Semiconductor

Results Overview of 2SK2503TL by ROHM Semiconductor

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

2SK2503TL Information

2SK2503TL by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2SK2503TL

Part # Distributor Description Stock Price Buy
Quest Components 5 A, 60 V, 0.2 OHM, N-CHANNEL, SI, POWER, MOSFET 3724
  • 1 $0.4725
  • 191 $0.2205
  • 908 $0.1969
$0.1969 / $0.4725 Buy Now
Quest Components 5 A, 60 V, 0.2 OHM, N-CHANNEL, SI, POWER, MOSFET 1824
  • 1 $1.0000
  • 121 $0.3000
  • 668 $0.2600
$0.2600 / $1.0000 Buy Now
ComSIT USA Electronic Component RoHS: Not Compliant Stock DE - 0
Stock ES - 239
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for 2SK2503TL

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2SK2503TL Part Data Attributes

2SK2503TL ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
2SK2503TL ROHM Semiconductor Power Field-Effect Transistor, 5A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CPT3, 3 PIN
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ROHM CO LTD
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 20 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Copper (Sn/Cu)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2SK2503TL

This table gives cross-reference parts and alternative options found for 2SK2503TL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2503TL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPB80N06S2LH5ATMA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN 2SK2503TL vs IPB80N06S2LH5ATMA1
NDB706AL Texas Instruments Check for Price 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 2SK2503TL vs NDB706AL
IXFK100N25 IXYS Corporation Check for Price Power Field-Effect Transistor, 100A I(D), 250V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN 2SK2503TL vs IXFK100N25
MTW33N10E Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 33A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE 2SK2503TL vs MTW33N10E
IXFH68N20 IXYS Corporation Check for Price Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, 2SK2503TL vs IXFH68N20
STD7NK30Z STMicroelectronics Check for Price 5A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3 2SK2503TL vs STD7NK30Z
STD12N06T4 STMicroelectronics Check for Price 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 2SK2503TL vs STD12N06T4
IRF3710HR International Rectifier Check for Price Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 2SK2503TL vs IRF3710HR
IXFX120N20 IXYS Corporation Check for Price Power Field-Effect Transistor, 120A I(D), 200V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN 2SK2503TL vs IXFX120N20
2SK3933-01SJ Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 11A I(D), 500V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 2SK2503TL vs 2SK3933-01SJ

2SK2503TL Related Parts

2SK2503TL Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the 2SK2503TL is -40°C to 150°C.

  • To ensure reliability, it is recommended to follow the derating guidelines provided in the datasheet, and to consider the thermal resistance and power dissipation of the device in the specific application.

  • The recommended storage condition for the 2SK2503TL is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of 5°C to 30°C and humidity below 60%.

  • Yes, the 2SK2503TL is suitable for high-frequency switching applications due to its low gate charge and high switching speed. However, it is recommended to follow the guidelines for high-frequency operation provided in the datasheet.

  • Handle the 2SK2503TL by the body, avoiding touching the leads or die. Use a soldering iron with a temperature below 260°C, and avoid applying excessive force or bending during assembly.