Datasheets
2SK2497 by: Toshiba America Electronic Components

TRANSISTOR X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal

Part Details for 2SK2497 by Toshiba America Electronic Components

Overview of 2SK2497 by Toshiba America Electronic Components

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Price & Stock for 2SK2497

Part # Distributor Description Stock Price Buy
ComSIT USA GAAS N CHANNEL SINGLE GATE MODULATION DOPE TYPE FIELD EFFECT TRANSISTOR RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET RoHS: Not Compliant Europe - 5000
RFQ
Sense Electronic Company Limited FO-92VAR 950
RFQ

Part Details for 2SK2497

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2SK2497 Part Data Attributes:

2SK2497 Toshiba America Electronic Components
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2SK2497 Toshiba America Electronic Components TRANSISTOR X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Reach Compliance Code unknown
Additional Feature LOW NOISE
Case Connection SOURCE
Configuration SINGLE
Drain Current-Max (ID) 0.08 A
FET Technology JUNCTION
Highest Frequency Band X BAND
JESD-30 Code R-PQSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 8.5 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position QUAD
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

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