Datasheets
2SK2226-01S by: Fuji Electric Co Ltd

Power Field-Effect Transistor, 20A I(D), 150V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3

Part Details for 2SK2226-01S by Fuji Electric Co Ltd

Overview of 2SK2226-01S by Fuji Electric Co Ltd

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for 2SK2226-01S

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2SK2226-01S Part Data Attributes

2SK2226-01S Fuji Electric Co Ltd
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2SK2226-01S Fuji Electric Co Ltd Power Field-Effect Transistor, 20A I(D), 150V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3
Part Life Cycle Code Obsolete
Ihs Manufacturer COLLMER SEMICONDUCTOR INC
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 80 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON
Turn-off Time-Max (toff) 1150 ns
Turn-on Time-Max (ton) 40 ns

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