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N Channel MOSFET, TO-3P, /Tube
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2SK2221-E-ND
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DigiKey | MOSFET N-CH 200V 8A TO3P Lead time: 36 Weeks Container: Tray | Temporarily Out of Stock |
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Buy Now | |
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Ameya Holding Limited | MOSFET N-CH 200V 8A TO-3P | 2678 |
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RFQ | |
DISTI #
2SK2221-E
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Avnet Asia | Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-3P Tube (Alt: 2SK2221-E) RoHS: Compliant Min Qty: 100 Package Multiple: 1 Lead time: 18 Weeks, 0 Days | 0 |
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RFQ | |
DISTI #
2SK2221-E
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Avnet Silica | Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-3P Tube (Alt: 2SK2221-E) RoHS: Compliant Min Qty: 2880 Package Multiple: 2880 Lead time: 28 Weeks, 0 Days | Silica - 0 |
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Buy Now |
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2SK2221-E
Renesas Electronics Corporation
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Datasheet
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2SK2221-E
Renesas Electronics Corporation
N Channel MOSFET, TO-3P, /Tube
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | TO-3P | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 4 | |
Manufacturer Package Code | PRSS0004ZE | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 1997-08-01 | |
Samacsys Manufacturer | Renesas Electronics | |
Case Connection | SOURCE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Drain Current-Max (ID) | 8 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 100 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |